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Active load

The concept of active loads emerged in the early 1960s with the development of monolithic integrated circuit operational amplifiers, such as the Fairchild μA702 (1963) and μA709 (1965), where transistor-based loads replaced resistors to achieve higher gain and compactness in silicon designs.^[1] An active load is an electronic circuit component that employs active devices, such as transistors, to act as a current-stable nonlinear resistor, providing high output impedance and enabling greater voltage gain in amplifier stages compared to traditional passive resistors.^[2]^[3] In analog integrated circuits, active loads replace passive resistors in configurations like common-emitter or differential amplifiers, where a transistor—often configured as a current source or mirror—serves as the load to the amplifying transistor, thereby increasing the small-signal gain by factors of the transistor's output resistance (typically on the order of hundreds of kilohms or more).^[2] This approach decouples the gain from the supply voltage requirements, allowing for compact, high-performance designs in CMOS or bipolar technologies without needing large resistors that consume significant die area.^[2]^[3] Key advantages of active loads include enhanced power efficiency, as they require external biasing but provide dynamic control over current and voltage, though they introduce challenges like susceptibility to mismatch and finite early voltage effects that limit maximum gain.^[2]^[3] Common implementations feature p-channel MOSFETs or PNP transistors as loads in NMOS or NPN amplifiers, with cascoded variants further boosting output resistance and gain to values exceeding 100 dB in integrated op-amps.^[2] Active loads are fundamental in modern RF and low-noise amplifiers, underpinning technologies from wireless communications to precision instrumentation.^[4]^[5]

Introduction

Definition and Purpose

An active load is a current-stable nonlinear resistor implemented using active devices, such as transistors configured as current mirrors, to serve as a load element in electronic circuits.^[6]^[2] Unlike passive resistors, it leverages the amplifying properties of transistors to dynamically adjust current flow while maintaining stability.^[7] The primary purpose of an active load is to provide high small-signal output impedance, which enhances voltage gain in amplifiers, while minimizing the DC voltage drop across the load to allow for larger output signal swings.^[2]^[6] This configuration decouples the trade-off between gain and biasing requirements that is inherent in resistive loads, enabling more efficient operation in integrated circuits where space and power are constrained.^[7] In operation, an active load behaves as an ideal current source during AC small-signal analysis, presenting very high impedance to signal variations and thereby maximizing amplification.^[6] However, it permits steady DC current flow to establish proper biasing in the circuit, ensuring the active devices remain in their intended operating regions.^[2]

Historical Context

The development of active loads coincided with the rapid advancement of bipolar integrated circuit technology in the 1960s, driven by the need to improve gain and efficiency in early operational amplifiers (op-amps) within compact monolithic designs. Prior to this, passive resistive loads dominated analog circuits, but their integration limitations in ICs prompted the shift to transistor-based alternatives. The landmark introduction occurred in the LM101 op-amp, designed by Robert Widlar at National Semiconductor and released in 1967, which employed current mirror active loads to boost stage gain significantly while simplifying compensation with a single capacitor.^[8]^[1] Robert Widlar, often credited as a foundational figure in linear IC design, further advanced active loads through his work on current mirroring techniques, essential for generating stable bias currents in integrated amplifiers and regulators. In 1967, he patented the Widlar current source, a refined current mirror variant that incorporated emitter degeneration for precise low-current replication, overcoming limitations of basic mirrors in bipolar processes. This innovation was immediately applied in Widlar's μA723 voltage regulator, the first adjustable monolithic IC regulator, where active loads replaced resistors to enhance regulation accuracy and power handling in op-amp support circuits. His designs at Fairchild and National Semiconductor exemplified how active loads enabled higher integration density and performance in early analog ICs.^[1]^[9] By the 1980s and 1990s, active loads transitioned to complementary metal-oxide-semiconductor (CMOS) technology, leveraging PMOS transistors as current sources to support low-power, high-density analog applications amid the rise of portable electronics. This evolution addressed bipolar's higher power consumption, with CMOS active loads providing rail-to-rail operation and reduced supply voltages, as seen in early precision op-amps like those from the late 1970s onward. The adoption accelerated with maturing submicron processes, making active-loaded stages standard for battery-efficient designs in consumer and industrial ICs.^[1]^[10]

Operating Principles

Basic Mechanism

An active load operates by employing a transistor biased in its active region, where the collector current remains largely independent of the collector-emitter voltage over a wide range, providing a high output resistance that mimics an ideal current source. In this mode, for a bipolar junction transistor (BJT), the base-emitter junction is forward-biased while the collector-base junction is reverse-biased, allowing the transistor to function as a controlled current device with minimal voltage-dependent variations in output current. This behavior stems from the transistor's intrinsic characteristics, enabling the active load to maintain a stable current despite fluctuations in the output voltage, which is essential for achieving high impedance at the output node.^[11] The high output resistance r_o of a single transistor in the active load configuration arises primarily from the Early effect, which causes a slight modulation of the base width with changes in collector voltage. This resistance is approximated by the equation r_o = \frac{V_A}{I_C}, where V_A is the Early voltage (a device parameter typically on the order of tens to hundreds of volts) and I_C is the collector current. The finite but high value of r_o ensures that the load current varies only minimally with output voltage swings, contributing to the overall high impedance of the active load circuit.^[12] In practical implementations, such as current mirror configurations, negative feedback plays a crucial role in stabilizing the output current against variations in temperature, process parameters, or supply voltage. By connecting the base and collector of the reference transistor (forming a diode-like structure), the circuit enforces equal base-emitter voltages across matched transistors, creating a feedback loop that adjusts the output transistor's bias to mirror the reference current precisely. This feedback mechanism enhances current stability and boosts the effective output resistance, making the active load suitable for applications requiring consistent biasing.^[13]

Comparison with Passive Loads

Passive loads, typically implemented as resistors in amplifier circuits, offer linear resistance that directly sets the load impedance, but this fixed value inherently limits the voltage gain, as the gain is given by a_v = -g_m R_L, where g_m is the transconductance and R_L is the load resistance, often requiring large R_L values that constrain design flexibility.^[2] In contrast, active loads employing transistors provide a much higher AC output impedance—approaching infinity in ideal current sources—allowing for substantially greater gain, such as a_v = -g_m r_o where r_o is the transistor output resistance, without relying on bulky passive components.^[14] A key trade-off lies in voltage headroom: passive loads incur a substantial DC voltage drop across the resistor, calculated as V_{drop} = I \cdot R, which can consume a significant portion of the supply voltage and reduce the available swing for the output signal.^[2] Active loads, however, operate with minimal headroom, typically requiring only the collector-emitter saturation voltage of the load transistor, V_{CE(sat)} \approx 0.2 \, \mathrm{V}, thereby preserving more headroom for signal amplification while maintaining bias stability. In integrated circuit design, active loads implemented via current mirrors facilitate superior transistor matching through techniques like common-centroid layouts, which minimize mismatches in process variations and enhance overall circuit precision, unlike passive resistors that lack such inherent adjustability and rely on less accurate fabrication tolerances.^[15]

Circuit Implementations

Common Configurations

The basic single-transistor active load configuration employs a single transistor, typically operated in the common-emitter or common-source mode and biased as a current source, to replace a passive resistor in amplifier circuits. This setup uses the transistor's high output resistance to provide a load impedance significantly greater than that of a resistor of comparable current-handling capability, thereby enhancing voltage gain without requiring large supply voltages. For instance, in bipolar junction transistor (BJT) implementations, a PNP transistor serves as the load for an NPN driver, with its base biased to maintain active-region operation.^[2] A multi-transistor active load, commonly realized as a current mirror, consists of two or more matched transistors where one is diode-connected to set a reference current that is replicated by the other, ensuring balanced current distribution across stages. This configuration is particularly suited for applications requiring precise current matching, such as in symmetric amplifier designs, and offers an output impedance determined primarily by the output resistance of the mirroring transistor. In BJT versions, the mirror uses PNP devices with emitters connected to the supply, while MOSFET implementations follow a similar topology with gates tied together and one drain shorted to the gate. The high impedance of this load arises from the active operation of the transistors, which minimizes voltage drops compared to passive elements.^[2] In complementary metal-oxide-semiconductor (CMOS) technology, active loads exhibit variations based on PMOS and NMOS transistors to accommodate different current directions and process characteristics. PMOS active loads, which source current from the positive supply, are often paired with NMOS drivers in common-source stages, leveraging the p-channel devices' ability to operate with lower hole mobility but providing complementary symmetry. Conversely, NMOS active loads sink current to ground and are used with PMOS drivers, benefiting from higher electron mobility for faster response in integrated circuits. These variations enable flexible topologies in low-power designs, where PMOS loads are favored for their integration with NMOS input stages to achieve balanced performance across supply rails.^[7]

Active Load in Common Base Amplifiers

In common base amplifiers, an active load is integrated by employing a second transistor, typically denoted as Q2, configured as a current source to replace the conventional resistive load at the collector of the amplifying transistor Q1. Here, Q1 operates in common base configuration, with its base terminal AC-grounded, the input signal applied to the emitter, and the output taken from the collector. Q2, often a PNP transistor for an NPN Q1, has its emitter connected to the positive supply V_{CC}, its base biased via a fixed voltage to set the quiescent current, and its collector connected to the collector of Q1, thereby providing a high-impedance path for the AC signal while maintaining a constant DC current.^[16]^[2] With a traditional resistive load R_C, the collector current I_C relates to the output voltage as I_C = \frac{V_{CC} - V_{out}}{R_C}, which inherently couples the DC bias point to the gain and restricts the output voltage swing. To achieve higher gain, a larger R_C is required, but this increases the DC voltage drop across R_C, compressing the available swing and potentially driving Q1 into saturation or cutoff during large signals. In contrast, the active load presented by Q2 offers theoretically infinite AC impedance (approximating the output resistance r_o of Q2), decoupling the bias from the gain and enabling the output to swing nearly to V_{CC} - V_{CE(sat)} without significant limitation from the load drop.^[2]^[17] This configuration significantly enhances the voltage gain of the common base stage, given by A_v \approx g_m R_{load}, where g_m is the transconductance of Q1 and R_{load} represents the effective load resistance, which is substantially higher with the active load compared to a resistor due to the transistor's output characteristics. Typical implementations achieve gains orders of magnitude greater than passive-loaded equivalents, making the active-loaded common base suitable for applications requiring high fidelity signal amplification with minimal distortion from swing limitations.^[16]^[17]

Active Load in Differential Amplifiers

In differential amplifiers, active loads are typically implemented using a pair of transistors configured as a current mirror to provide a high-impedance load for the differential input stage, enabling single-ended output conversion while maintaining balanced operation.^[18] This setup involves the differential pair (e.g., two NMOS transistors with tails connected to a current source) loaded by a PMOS current mirror, where one PMOS is diode-connected to sense the current from one branch and mirror it to the other, effectively converting the double-ended differential signal to a single-ended output at the drain of the second PMOS.^[7] The differential voltage gain A_d for this configuration is given by

A_d = g_m (r_o \parallel r_o),

where g_m is the transconductance of the input transistors and r_o is their output resistance, resulting in an effective load resistance of r_o / 2.^[18] This gain is approximately double that of an equivalent resistive-loaded differential amplifier with single-ended output, as the current mirror avoids the factor-of-two signal loss in differential-to-single-ended conversion while providing a much higher impedance than passive resistors.^[7] The active load enhances common-mode rejection through its balanced current mirroring, which suppresses common-mode signals by ensuring equal current splitting in both branches under common-mode inputs, thereby minimizing output deviation and improving the common-mode rejection ratio (CMRR).^[18] This balanced loading keeps the common-mode gain low (on the order of g_{ob} / (2 g_m), where g_{ob} is the body-effect transconductance), contributing to high CMRR values often exceeding 60 dB in integrated implementations.^[7]

Practical Aspects

Advantages

Active loads provide a significant boost to amplifier performance by offering a high output impedance, which directly enhances voltage gain in single-stage amplifiers. In a common-source configuration with an active load, such as a current-source transistor, the small-signal gain is given by A_v = -g_{m1} (r_{O1} \parallel r_{O2}), where the parallel combination of output resistances yields a much higher effective load impedance compared to passive resistors, often by orders of magnitude. This impedance boost not only increases the low-frequency gain but also improves the overall bandwidth in integrated circuits by minimizing parasitic loading effects and enabling higher unity-gain frequencies in multi-stage designs.^[19]^[20] Another key benefit is the improved power efficiency and headroom in low-voltage integrated circuits, where active loads like MOS current mirrors require minimal DC voltage drop—typically just the saturation voltage V_{DS,sat} of around 100-200 mV—allowing operation at supply voltages as low as 0.5-1 V without sacrificing performance. This contrasts with passive resistors, which demand larger voltage drops proportional to their resistance values, thus preserving more headroom for signal swing and reducing power dissipation in battery-powered or scaled CMOS processes. Such efficiency gains are particularly valuable in modern sub-micron technologies, enabling higher integration density while maintaining rail-to-rail output capabilities.^[19] In monolithic integration, active loads facilitate superior component matching and scalability, as transistors fabricated on the same silicon die exhibit excellent parameter uniformity due to process proximity, with mismatch typically below 1% for current mirrors. This matching ensures precise bias currents and balanced differential operation, reducing offset voltages in amplifiers and simplifying layout compared to discrete or poly-resistor loads that suffer from larger variations and area overhead. The use of active devices thus supports compact, cost-effective scaling in VLSI designs, where large resistor values would otherwise consume excessive chip area.^[2]^[21]

Limitations and Design Considerations

Active loads, while providing high impedance, suffer from finite output resistance primarily due to the Early effect in BJTs or channel-length modulation in MOSFETs. In BJT-based active loads, the Early effect causes the collector current to vary with collector-emitter voltage, yielding an output resistance r_o \approx V_A / I_C, where V_A is the Early voltage (typically 50-100 V) and I_C is the collector current; this finite resistance shunts the load, reducing the effective impedance and thus limiting amplifier gain below ideal values.^[17] Similarly, in MOSFET active loads, channel-length modulation introduces an output resistance r_o = 1 / (\lambda I_D), with \lambda being the modulation parameter (around 0.01-0.1 V^{-1}), further degrading the load's infinite-impedance approximation.^[17] Mitigation strategies include cascode configurations, which boost output resistance by factors of g_m r_o (often 10-100 times higher), though at the cost of increased complexity and voltage headroom.^[17] Another key limitation is the minimum voltage drop required across the active load transistor to maintain saturation operation, which constrains the amplifier's output swing. For MOSFET active loads, this headroom is typically V_{DS(sat)} \approx 0.1-0.2 V, while for BJTs it is V_{CE(sat)} \approx 0.2 V; falling below these thresholds drives the transistor into the triode region, significantly reducing output resistance and distorting the signal.^[22] This restriction is particularly pronounced in low-voltage designs, where the available supply may limit the dynamic range to less than the full rail-to-rail excursion possible with passive loads. Designers often address this by selecting low-threshold devices or optimizing bias points to minimize V_{DS(sat)}, but trade-offs with gain and linearity must be considered.^[22] Active loads are also sensitive to temperature and process variations, which can cause mismatches in current mirroring and shifts in transconductance, leading to gain instability. Temperature changes affect carrier mobility and threshold voltages, potentially altering bias currents by 10-20% over a 0-100°C range, while process variations in fabrication can introduce up to 20% deviations in device parameters like \beta or \mu C_{ox}.^[23] To counteract these, design techniques such as adjustable bias currents via temperature-compensated references—where currents are scaled proportionally to temperature using PTAT (proportional-to-absolute-temperature) sources—help maintain stability.^[24] Additionally, incorporating feedback loops or replica biasing circuits allows real-time adjustment of tail currents, ensuring robust performance across PVT (process, voltage, temperature) corners without excessive power overhead.^[24]

Applications

In Amplifier Circuits

Active loads play a crucial role in the input stages of operational amplifiers, where they replace passive resistors to deliver high voltage gain with minimal power consumption. In typical CMOS designs, a current mirror active load paired with a differential input pair boosts the transconductance-to-output-resistance product, achieving open-loop gains exceeding 80 dB while operating at supply voltages below 1.8 V. This configuration is particularly advantageous in low-power applications, as demonstrated in a folded-cascode operational amplifier that attains over 1 million gain at approximately 110 µW dissipation.^[25] Such efficiency stems from the high output impedance of the active load, which avoids the static power draw of resistive loads, enabling battery-operated systems without sacrificing performance.^[2] In RF amplifiers, active loads facilitate wideband operation by enhancing gain and impedance matching in compact integrated circuits. For instance, in cascode low-noise amplifiers (LNAs), transistor-based active loads provide the necessary isolation and bandwidth extension. This is evident in CMOS LNAs where active inductor loads, realized through gyrator circuits, reduce chip area compared to spiral inductors while supporting RF frequencies. Folded cascode topologies further leverage active loads to improve bandwidth, linearity and dynamic range for RF front-ends in wireless receivers.^[26] The integration of active loads in CMOS processes has become standard for mixed-signal circuits, particularly in analog-to-digital converters (ADCs), where they support high-speed, low-power amplification. In pipeline ADCs, active-loaded operational transconductance amplifiers (OTAs) drive residue stages and multiplying DACs, enabling effective number of bits over 10 while consuming less than 100 mW total power. This is highlighted in 14-bit pipeline designs using 0.18 µm CMOS, where active loads contribute to over 100 dB spurious-free dynamic range through precise gain control and minimal offset.^[27] Such implementations are vital for modern SoCs, allowing seamless analog-digital interfacing in applications like communications and instrumentation.

In Test and Measurement Equipment

Active loads in test and measurement equipment serve as programmable electronic devices that simulate dynamic load conditions for stress-testing power supplies (PSUs), functioning as electronically controlled variable resistances or current sinks to evaluate performance under various operating scenarios.^[28] These devices emulate real-world loads, such as those from batteries, motors, or electronic systems, allowing engineers to assess PSU stability, efficiency, and response without relying on passive resistors or dummy loads.^[29] They operate in multiple modes to replicate diverse load behaviors, including constant current (CC) mode, where a fixed current is drawn regardless of voltage changes; constant voltage (CV) mode, maintaining a set voltage across the load; constant resistance (CR) mode, mimicking a specific ohmic value; and constant power (CP) mode, absorbing a predetermined power level by dynamically adjusting current and voltage.^[28] Additionally, transient response simulation enables rapid switching between load levels or arbitrary waveforms to test PSU dynamics, such as recovery time during sudden current spikes up to 100 A with rise times as low as 650 ns.^[30] Design features emphasize reliability in high-power environments, incorporating robust heat sinking—often air-cooled for moderate applications or liquid-cooled for high-density setups—to manage power dissipation exceeding 200 W while preventing thermal shutdown at thresholds like 70°C.^[29] Digital interfaces, such as GPIB, LAN, USB, or touchscreens, facilitate automated control and integration with test systems for programmable sequences.^[28] Built-in measurement capabilities provide precise monitoring of voltage, current, and power with accuracies around ±1%, often using shunt resistors and differential amplifiers, reducing the need for external instrumentation.^[30]

References

[1]
[PDF] Active Loads - Harvey Mudd College
These transistors are referred to as active loads, in contrast with loads made of passive devices like resistors.Missing: electronics definition
[2]
Active vs. Passive Loads: Understanding Electrical Circuit Differences
### Definitions and Key Differences
[3]
Low-noise distributed amplifier with active load - IEEE Xplore
A low-noise device can be configured to emulate a one-port resistor, but with lower apparent noise temperature than the physical ambient temperature.
[4]
Chireix amplifier with enhanced bandwidth using active load
Abstract: The use of an active load has been recently proposed for the realization of power-efficient broadband balanced amplifiers.
[5]
None
Below is a merged summary of "Active Load" in Amplifiers from *Analysis & Design of Analog Integrated Circuits* (5th Ed.), consolidating all the information from the provided segments into a comprehensive response. To retain maximum detail and ensure clarity, I will use a table in CSV format to organize the key aspects (Definition, Purpose, High Output Impedance, Low DC Drop, Current Source in AC, and DC Current Flow) along with page references and useful URLs. Following the table, I will provide a narrative summary to tie everything together and highlight additional context.
[6]
[PDF] 1. Basic current mirrors 2. single-stage amplifiers 3. differential ...
A common use of simple current mirrors is to be active loads in a single-stage amplifier. By using an active load, a high-impedance output load can be realized ...
[7]
[PDF] Tales of the Continuum: A Subsampled History of Analog Circuits
As the digital revolution started to gain a head of steam in the late 1960s the need for regulated +5V supplies to power up the growing “gate farms” of TTL ICs ...
[8]
[PDF] H Op Amp History - Analog Devices
Op amp history began in the early 20th century with vacuum tubes, named in 1947, and the first IC op amp in the mid-1960s.
[9]
Bob Widlar's 723 chip toolkit adventures - Boldport
Jan 11, 2018 · “The μA723 voltage regulator is a classic. Designed by Bob Widlar and first introduced in 1967, it is a flexible, easy-to-use regulator with ...
[10]
https://ieeexplore.ieee.org/document/566643
[11]
Active-mode Operation (BJT) | Bipolar Junction Transistors
When a transistor is in the fully-off state (like an open switch), it is said to be cutoff. Conversely, when it is fully conductive between emitter and ...
[12]
Understanding the Early Effect - Technical Articles - All About Circuits
Apr 2, 2018 · This technical brief discusses the Early effect and how it influences the amplification characteristics of a bipolar junction transistor.Missing: mechanism resistance
[13]
Chapter 11: The Current Mirror - Analog Devices Wiki
Sep 17, 2021 · This circuit is named for its inventor, Robert Widlar, and was patented in 1967. The Widlar circuit may be used with bipolar transistors or MOS ...
[14]
[PDF] Differential Amplifiers
Diff Pair with Passive Load: Suppose we need a high-gain differential amplifier with single-ended output: What is the voltage gain? Diff Pair with Active Load: ...
[15]
[PDF] Low Voltage Design Techniques and Considerations for Integrated ...
May 31, 1995 · The current mirror is widely used as active loads and bias circuit elements. ... If ideal current sources and matched transistors are ...
[16]
[PDF] Building Blocks of Integrated-Circuit Amplifiers
CS amplifier with PMOS active load. AAvv = −ggmmm(rroom ... common-base. AAvv ≈ −ggmmmRRoo ≈ −ggmmm𝛽𝛽2rr02.
[17]
None
### Summary of Active Loads in Common Base Amplifiers
[18]
[PDF] Two Active Loads for Differential Amplifiers - MIT OpenCourseWare
The current mirror load provides double-ended to single-ended conversion without suffering the loss of a factor of two in differential-mode gain (the common- ...
[19]
[PDF] Design of Analog CMOS Integrated Circuits, Second Edition
This book deals with the analysis and design of analog CMOS integrated circuits, emphasizing fun- damentals as well as new paradigms that students and ...
[20]
[PDF] Amplifier Design Using an Active Load
An active load is advantageous because it presents a high small-signal impedance but without requiring a high DC voltage drop. We had to establish a Quiescent ...
[21]
Advantages of the Actively Loaded MOSFET Differential Pair
Jun 21, 2016 · In this article, we'll discuss two benefits of using an active load: improved biasing conditions and differential-to-single-ended conversion.
[22]
[PDF] Current mirrors & Active loads
C'e TO BIAS CIRCUITS CONTAINING. A MINIMUM NUMBER OF TRANSISTORS! FOR INTEGRATED CIRCUITS ¦ ... (CURRENT SOURCES MATCH). ⇒ VOI (DE) = Vo(m) VARIES WIDELY ...
[23]
[PDF] A Differential Active Load and its Applications in CMOS Analog ...
Abstract—In this paper we describe a CMOS differential active load and show how it can be used to create various useful structures.
[24]
[PDF] design and simulation of all-cmos temperature-compensated
The temperature compensation of an OTA is achieved by making the bias currents of the amplifying devices increase with temperature in such a way as to ...
[25]
"High Gain Low Power Operational Amplifier Design and ...
Feb 14, 2007 · The proposed op amp produces an open loop gain above one million with low power consumption around 110 µW and shows a favorable slew rate and ...
[26]
https://etd.ohiolink.edu/acprod/odb_etd/ws/send_file/send?accession=osu1752074423100375&disposition=inline
[27]
[PDF] Frequency compensation techniques for wide-band ... - OhioLINK ETD
Over the past years, different techniques have been introduced to enhance the bandwidth. The folded cascode configuration [1] is widely used because its ...
[28]
[PDF] A 14-b 12-MS/s CMOS Pipeline ADC With Over 100-dB SFDR
This 14-bit, 12-MS/s pipeline ADC achieves 75.5 dB SNDR and over 100 dB SFDR, using a 1.8V, 98mW power consumption, and 0.47/0.54 LSB nonlinearity.
[29]
None
### Summary of Electronic Load Fundamentals
[30]
Considerations for Selecting an Electronic Load - Tektronix
Programmable loads support multiple modes, including constant current, voltage, resistance, and power. They are versatile enough to meet a wide range of testing ...
[31]
None
### Summary of 100A Active Load Design and Function