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Charge carrier

In physics, a charge carrier is a particle or quasiparticle that is free to move within a material, carrying mobile electric charge and enabling the conduction of electric current.^[1] These carriers are essential for understanding electrical conductivity across various materials, where their type, concentration, and mobility determine the material's response to applied electric fields.^[2] The nature of charge carriers varies by material class. In metals, such as copper, conduction primarily occurs via free electrons, which are negatively charged particles detached from atomic cores and moving through the lattice of stationary positive ions.^[3] In semiconductors like silicon, both electrons in the conduction band and holes—positively charged vacancies in the valence band—serve as carriers, with their densities governed by thermal generation across the bandgap (approximately 1.1 eV for silicon at room temperature) and often enhanced by doping to create majority and minority carriers.^[4] In electrolytes, ions such as cations and anions act as the mobile charge carriers, facilitating conduction in solutions or solid ionic conductors through mechanisms like diffusion and migration under electric fields.^[5] Key properties of charge carriers include their concentration (e.g., intrinsic carrier density in silicon is about 10^{10} cm^{-3} at 300 K), effective mass (e.g., 0.26 m_0 for electrons in silicon, where m_0 is the free electron mass), and mobility, which quantifies how readily they respond to electric fields amid scattering from lattice vibrations or impurities.^[4]^[2] Carriers can be generated by thermal excitation, photon absorption, or doping, and they recombine over time, influencing device performance in applications like transistors, solar cells, and batteries.^[6] The drift velocity of carriers under an applied field is typically small (e.g., on the order of mm/s in metals), yet collective motion produces measurable currents.^[3]

Fundamental Concepts

Definition and Role in Electrical Conduction

A charge carrier is any particle or quasiparticle that possesses a net electric charge and is free to move within a material, thereby enabling the flow of electric current.^[1] These carriers, such as electrons or ions, respond to applied electric fields by acquiring a directed motion known as drift velocity, which collectively produces a net charge displacement.^[3] In electrical conduction, the role of charge carriers is fundamental to Ohm's law and the transport of current through materials. When an electric field \mathbf{E} is applied, the carriers experience a force \mathbf{F} = q \mathbf{E}, where q is the carrier's charge, leading to an average drift velocity \mathbf{v}_d. The resulting current density is given by

\mathbf{J} = n q \mathbf{v}_d,

where n is the density of charge carriers; this expression quantifies how the motion of these free charges sustains electric current in conductors, semiconductors, and other media.^[3] For instance, in metallic wires, electrons serve as the primary carriers, while in electrolytic solutions, ions fulfill this function.^[1] The concept of charge carriers originated in the early 20th century with Paul Drude's classical model of electrical conduction in metals, proposed in 1900, which treated valence electrons as a gas of free particles responsible for conductivity.^[7] This Drude model provided the initial framework for understanding carrier motion and laid the groundwork for later quantum refinements. Throughout the 20th century, the idea was extended beyond metals to semiconductors, insulators, fluids, and gases, incorporating quantum band theory and diverse carrier types to explain conduction in a broader range of materials.^[8]

Types of Charge Carriers

Charge carriers are the mobile particles that facilitate electrical conduction in various materials, and they can be categorized into several primary types based on their nature and the physical context in which they operate. The most fundamental charge carriers include electrons, holes, and ions, each exhibiting distinct properties and roles in different media such as solids, liquids, and gases.^[9]^[10] Electrons are negatively charged elementary particles with a charge of -1.602 × 10^{-19} C and a rest mass of approximately 9.109 × 10^{-31} kg.^[11]^[12] They serve as the primary charge carriers in metals, where they move freely through the lattice structure to conduct electricity, and in n-type semiconductors, where donor impurities provide excess electrons that act as the majority carriers.^[9]^[13] In semiconductors, holes represent positively charged quasiparticles that arise from the absence of an electron in the valence band, effectively behaving as carriers with a positive charge of +1.602 × 10^{-19} C.^[14] Unlike true particles, holes are collective excitations whose effective mass varies depending on the material and band structure; for instance, in silicon, heavy-hole effective masses are around 0.49 times the electron mass, while light-hole masses are about 0.16 times.^[15] Holes dominate conduction in p-type semiconductors as majority carriers. Ions, which are charged atoms or molecules, function as charge carriers primarily in electrolytes and other fluid media. Examples include sodium ions (Na^+) with a +1 charge and chloride ions (Cl^-) with a -1 charge in aqueous sodium chloride solutions, where they migrate under an electric field to enable conduction.^[10] Their mobility is generally lower than that of electrons due to the surrounding solvation shells formed by solvent molecules, which increase drag and hinder rapid movement.^[16] Other types of charge carriers are less common in condensed matter physics but noteworthy in specialized contexts. Positrons, the antiparticles of electrons with a positive charge of +1.602 × 10^{-19} C and identical mass, occasionally act as charge carriers in particle physics experiments but are rare in typical materials due to rapid annihilation with electrons.^[17] A universal property of all charge carriers is quantization, meaning their charges are integer multiples of the elementary charge e = 1.602 × 10^{-19} C, ensuring discrete rather than continuous charge values.^[18]^[11]

Charge Carriers in Solids

In Metals

In metals, charge carriers are primarily conduction electrons that behave as a free electron gas, delocalized within the conduction band and contributing to electrical conduction due to their high density, typically on the order of $10^{28} to $10^{29} electrons per cubic meter.^[19] This model posits that valence electrons are detached from their parent atoms, forming a sea of nearly free particles that can move through the lattice of positive ions under an applied electric field.^[20] The high carrier density arises from the overlap of atomic orbitals in the metallic bond, allowing one or more electrons per atom to participate in conduction, as seen in simple metals like alkali metals and copper.^[19] The classical description of charge carrier transport in metals is provided by the Drude model, which treats electrons as a gas of classical particles subject to collisions with lattice ions. In this framework, the electrical conductivity \sigma is given by

\sigma = \frac{n e^2 \tau}{m},

where n is the electron density, e the elementary charge, \tau the average relaxation time between collisions, and m the electron mass.^[21] The relaxation time \tau accounts for scattering events that randomize electron velocities, leading to a finite resistivity despite the high carrier density. This model successfully explains Ohm's law and the positive temperature coefficient of resistivity in metals, attributing increased scattering at higher temperatures to enhanced lattice vibrations.^[21] However, the Drude model assumes classical Maxwell-Boltzmann statistics, which fails at room temperature because the electron gas in metals is highly degenerate, governed by Fermi-Dirac statistics. At typical temperatures, the Fermi energy E_F, representing the energy of the highest occupied state at absolute zero, is on the order of a few electron volts (e.g., approximately 7 eV for copper), far exceeding the thermal energy k_B T \approx 0.025 eV.^[19] This degeneracy means only electrons near the Fermi surface contribute to conduction, as lower-energy states are Pauli-blocked. The quantum refinement by Sommerfeld incorporates these statistics, yielding conductivities close to experimental values for simple metals.^[20] Despite its successes, the free electron model, including both classical and quantum versions, has limitations: it neglects the periodic lattice potential, treating electrons as fully free and ignoring band structure effects that arise from quantum mechanical wave interactions with the ion lattice.^[22] Additionally, while the model includes scattering via a phenomenological relaxation time, it does not distinguish between mechanisms such as phonon (lattice vibration) scattering, which dominates at high temperatures, and impurity scattering, which is more prominent in alloys or defective crystals.^[22] For example, pure copper exhibits high conductivity with a room-temperature resistivity of \rho \approx 1.7 \times 10^{-8} \Omega \cdotm, reflecting low scattering rates and high n \approx 8.5 \times 10^{28} m^{-3}, making it a benchmark for metallic conductors.^[23]^[19]

In Semiconductors

In semiconductors, charge carriers primarily consist of electrons in the conduction band and holes in the valence band, which enable electrical conduction when excited across the bandgap. Unlike metals, where free electrons dominate, semiconductors exhibit a bandgap energy E_g (e.g., 1.12 eV for silicon at 300 K) that separates the valence band—filled with bound electrons—from the empty conduction band, resulting in low intrinsic conductivity at room temperature.^[4] Electrons carry negative charge and move toward the anode under an applied field, while holes—effective positive charges arising from valence band vacancies—move oppositely, both contributing to current flow.^[24] In intrinsic semiconductors, such as pure silicon or germanium, charge carriers are generated thermally when electrons gain sufficient energy (\geq E_g) to jump from the valence to the conduction band, creating equal numbers of electrons and holes. The intrinsic carrier concentration n_i quantifies this, given by n_i = \sqrt{N_c N_v} \exp\left(-\frac{E_g}{2kT}\right), where N_c and N_v are the effective densities of states in the conduction and valence bands, respectively, k is Boltzmann's constant, and T is temperature; for silicon at 300 K, n_i \approx 1 \times 10^{10} cm^{-3}.^[4] Recombination occurs when an electron falls back into a hole, often emitting a photon, restoring thermal equilibrium and maintaining np = n_i^2, the mass-action law essential for carrier balance.^[24] Extrinsic semiconductors, formed by intentional doping with impurities, dramatically increase carrier density to enhance conductivity for devices like transistors. In n-type doping, group V elements (e.g., phosphorus in silicon) introduce donor atoms with shallow energy levels (~45-50 meV below the conduction band), ionizing to donate excess electrons as majority carriers, while holes become minorities with concentration p = n_i^2 / n \approx n_i^2 / N_d, where N_d is the donor density.^[4] Conversely, p-type doping uses group III elements (e.g., boron), creating acceptor levels (~45 meV above the valence band) that accept electrons, generating holes as majority carriers with n = n_i^2 / p \approx n_i^2 / N_a, where N_a is acceptor density.^[25] The Fermi level shifts toward the conduction band in n-type materials and the valence band in p-type, altering carrier statistics while preserving thermal equilibrium.^[4] Carrier generation in semiconductors also occurs via optical absorption or other excitations, but thermal and doping mechanisms dominate practical applications, enabling control over conductivity from insulators to near-metallic levels. Typical doping levels range from $10^{15} to $10^{19} cm^{-3}, far exceeding intrinsic values, to tailor device performance without altering the host lattice significantly.^[26]

In Superconductors

In superconductors, charge carriers manifest as Cooper pairs, which are bound states of two electrons with opposite spins and momenta, forming a spin singlet. These pairs carry an effective charge of -2e and have an effective mass approximately twice that of a single electron, enabling collective quantum behavior below the critical temperature T_c. Unlike free electrons in normal metals, Cooper pairs experience no scattering from lattice vibrations or impurities in the superconducting state, allowing persistent currents without dissipation.^[27] The formation of Cooper pairs is explained by Bardeen-Cooper-Schrieffer (BCS) theory, proposed in 1957, which attributes the binding to a phonon-mediated attraction between electrons, overcoming their Coulomb repulsion. This pairing opens a superconducting energy gap \Delta in the electronic density of states, with \Delta(0) \approx 1.76 k_B T_c at zero temperature, where k_B is Boltzmann's constant; this gap suppresses single-particle excitations and stabilizes the superconducting phase. Below T_c, the superconductor exhibits zero electrical resistance, corresponding to infinite DC conductivity, as the paired carriers accelerate indefinitely under an applied electric field without energy loss to scattering.^[27] A hallmark of superconductivity is the Meissner effect, where magnetic fields are expelled from the interior of the material, demonstrating perfect diamagnetism. This phenomenon is described by the London equations, which relate the supercurrent density \mathbf{J} to the magnetic vector potential \mathbf{A} via \mathbf{J} = -\frac{n_s e^2}{m} \mathbf{A}, where n_s is the density of superconducting electrons and m is the electron mass; the magnetic field penetrates only to a characteristic London penetration depth \lambda = \sqrt{\frac{m}{\mu_0 n_s e^2}}. Superconductors are classified into conventional types, such as BCS-like materials exemplified by NbTi with T_c \approx 10 K, and unconventional high-T_c cuprates like YBa_2Cu_3O_7 (YBCO) with T_c \approx 90 K, featuring d-wave pairing symmetry.^[28]^[29] Recent advancements include the discovery of iron-based superconductors in 2008, which exhibit T_c values up to around 56 K and multi-band pairing mechanisms, expanding the palette of materials beyond cuprates. As of 2025, claims of room-temperature superconductivity under ambient conditions remain unverified, with ongoing research focusing on hydride materials and predictive theories to achieve practical high-T_c applications.^[30]^[31]

Charge Carriers in Fluids and Gases

In Electrolytes

In electrolytes, charge carriers are ions that conduct electricity through their migration in response to an applied electric field. These include cations, such as Li⁺ and H⁺, which move toward the cathode, and anions, such as OH⁻ and Cl⁻, which migrate toward the anode.^[32] The contribution of each ionic species to the total current is quantified by its transport number t_i, defined as the fraction of the total electric current carried by that species, where \sum t_i = 1.^[32] The conduction mechanism in electrolytes relies on the drift of solvated ions through the medium, where ions are surrounded by solvent molecules that influence their movement. The ionic conductivity \sigma is given by

\sigma = \sum_i \frac{n_i z_i^2 e^2 D_i}{kT},

where n_i is the number density of ions of type i, z_i is the valence, e is the elementary charge, D_i is the diffusion coefficient, k is Boltzmann's constant, and T is the temperature.^[33] This relation connects conductivity to ionic diffusion via the Einstein relation, D_i = \mu_i kT / e, linking the diffusion coefficient D_i to the ionic mobility \mu_i.^[34] Electrolytes are classified into aqueous types, such as sodium chloride (NaCl) solutions in water; non-aqueous types, often used in batteries with organic solvents to achieve wider electrochemical windows; and solid types, exemplified by β-alumina ceramics that enable fast ion conduction without liquid components.^[35] In applications like lithium-ion batteries, Li⁺ ions serve as the primary charge carriers in the electrolyte, facilitating ion shuttling between electrodes during charge-discharge cycles.^[36] In electrochemistry, Faraday's laws describe how the mass of substance deposited or liberated at electrodes is proportional to the charge passed, with the first law stating m = (Q / F) \cdot (M / z), where Q is charge, F is Faraday's constant, M is molar mass, and z is the number of electrons transferred per ion.^[37] Despite these advantages, ionic conduction in electrolytes has limitations, including low mobility values around $10^{-8} m²/V·s compared to electrons in solids, which restricts current densities and power output.^[38] Electrode reactions can lead to side effects like gas evolution or passivation layers, while in solid electrolytes, dendrite formation—particularly lithium dendrites piercing the electrolyte—remains a critical challenge in 2020s battery research, potentially causing short circuits.^[39] Historically, the foundation for understanding ionic dissociation in electrolytes was laid by Svante Arrhenius in 1887, who proposed that electrolytes dissociate into free ions in solution, enabling conduction.^[40]

In Plasmas

In plasmas, the primary charge carriers are free electrons and positively charged ions, which collectively enable the material's high electrical conductivity and responsiveness to electromagnetic fields. These carriers maintain quasi-neutrality, where the electron density n_e approximately equals the sum of the ion densities weighted by their charge states, n_e \approx \sum n_i Z_i, ensuring overall electrical balance despite local fluctuations.^[41] In fusion plasmas, for instance, the carriers typically consist of protons (H^+) from hydrogen isotopes and electrons, with densities on the order of $10^{20} m^{-3}.^[42] A key feature of plasmas is Debye screening, where surrounding charge carriers rearrange to shield individual charges, effectively neutralizing electric fields over a characteristic distance known as the Debye length, given by \lambda_D = \sqrt{\frac{\varepsilon_0 k T}{n e^2}}, with \varepsilon_0 the vacuum permittivity, k Boltzmann's constant, T the temperature, n the carrier density, and e the elementary charge.^[43] This screening length, often on the order of micrometers to millimeters in typical plasmas, prevents long-range Coulomb interactions and defines the plasma's collective behavior. Plasmas exhibit natural collective oscillations of their charge carriers at the plasma frequency, \omega_p = \sqrt{\frac{n e^2}{\varepsilon_0 m_e}}, where m_e is the electron mass; this frequency, typically in the GHz to THz range depending on density, represents the timescale for electron plasma waves and influences wave propagation and stability. These oscillations underscore the plasma's ability to support electromagnetic phenomena distinct from neutral gases. Charge carriers in plasmas are generated through thermal ionization, described by the Saha equation, which relates ionization fractions to temperature and density in thermal equilibrium: for a species, the ratio of ionized to neutral density scales as \frac{n_{i+1} n_e}{n_i} \propto \left( \frac{2\pi m_e k T}{h^2} \right)^{3/2} e^{-I / k T}, where I is the ionization energy and h Planck's constant.^[44] Alternatively, external methods such as electrical discharges, laser pulses, or particle beams can ionize gases non-thermally, creating carrier densities tailored for specific applications.^[45] Transport of charge carriers in plasmas involves ambipolar diffusion, where electrons and ions move together due to mutual electrostatic coupling, resulting in an effective diffusion coefficient that balances their differing mobilities and preserves quasi-neutrality.^[46] Plasma resistivity arises primarily from electron-ion collisions and is generally orders of magnitude higher than in metals, on the scale of $10^{-4} to $10^{-6} \Omegam, due to the lower carrier densities and thermal velocities in the gaseous medium.^[47] Prominent examples include fusion research in tokamaks, where deuterium-tritium plasmas at temperatures around $10^8 K sustain thermonuclear reactions through confined electron and ion carriers.^[48] In astrophysical contexts, the solar corona features a plasma of protons and electrons heated to millions of Kelvin, with electron densities around 10^{14} m^{-3} near the solar limb.^[49] Industrially, plasma etching employs reactive ion plasmas, with carriers like F^- or Ar^+ and electrons, to anisotropically remove material from semiconductor surfaces at pressures below 100 Pa.^[50] Recent advancements in the 2020s have enhanced ion thrusters for space propulsion, where xenon ions serve as carriers accelerated electrostatically to exhaust velocities over 30 km/s, enabling efficient deep-space missions with improved power handling up to kilowatts.^[51]

Quantum and Advanced Phenomena

Quasiparticles and Effective Mass

In solid-state physics, charge carriers are often described using the concept of quasiparticles, which represent collective excitations in interacting many-body systems that behave like individual particles with well-defined properties. These quasiparticles emerge from the interactions among electrons, lattice vibrations, and other degrees of freedom, allowing a simplified treatment of complex quantum phenomena. Common examples include holes, which are absences of electrons in the valence band acting as positive charge carriers, and polarons, formed by an electron dressed with a cloud of lattice distortions due to electron-phonon coupling.^[52]^[53] The quantum mechanical framework for understanding charge carriers in periodic potentials is provided by band theory, where electron wavefunctions are described by Bloch's theorem. According to this theorem, the wavefunction in a crystal lattice takes the form \psi_k(\mathbf{r}) = u_k(\mathbf{r}) e^{i \mathbf{k} \cdot \mathbf{r}}, with u_k(\mathbf{r}) being a periodic function matching the lattice periodicity and \mathbf{k} the wavevector in the Brillouin zone. Charge carriers, such as electrons or holes, are excited states near the band edges, where the energy dispersion E(\mathbf{k}) determines their effective behavior.^[54] A key property of these quasiparticles is the effective mass m^*, which accounts for the influence of the lattice on carrier motion and differs from the free electron mass m_e. Derived from the curvature of the energy band, the effective mass is given by m^* = \frac{\hbar^2}{\frac{d^2 E}{dk^2}}, where a positive (negative) curvature at conduction (valence) band minima or maxima yields a lighter or heavier effective mass compared to m_e. For instance, in gallium arsenide (GaAs), the electron effective mass in the conduction band is approximately $0.067 m_e, enabling high carrier velocities crucial for optoelectronic devices. In ionic crystals, the polaron effective mass is enhanced due to strong electron-phonon interactions, as described by the Fröhlich model, which treats the electron coupled to longitudinal optical phonons.^[55]^[4]^[56]^[57] Advanced quasiparticles include anyons in two-dimensional systems, which exhibit fractional statistics and charge, arising in the fractional quantum Hall effect where quasiparticles carry fractional electric charge and obey neither fermionic nor bosonic exchange rules. Magnons, as spin quasiparticles, represent collective excitations of electron spins in magnetic materials, propagating as quantized spin waves without net charge but influencing charge carrier dynamics indirectly. In recent developments, topological quasiparticles such as Majorana fermions—self-conjugate particles with zero effective mass at zero energy—are proposed and have been claimed to be observed in hybrid superconductor platforms, including iron-based superconductors, with ongoing research as of 2025, offering potential for fault-tolerant quantum computing through their non-Abelian statistics.^[58]^[59]^[60]^[61]^[62]

Carrier Mobility and Transport Mechanisms

Carrier mobility, denoted as \mu, quantifies the ease with which charge carriers drift under an applied electric field E, defined by the relation for drift velocity v_d = \mu E.^[63] This linear response holds in the low-field regime, where the average velocity gained between scattering events balances the applied force. In the Drude model generalized to semiconductors, mobility arises from the relaxation time \tau between collisions and the effective mass m^* of carriers, given by \mu = \frac{e \tau}{m^*}, with e the elementary charge.^[64] Here, \tau encapsulates the material's scattering environment, and m^* accounts for band structure effects, distinguishing transport from classical free-electron behavior in metals.^[65] Scattering mechanisms limit \tau and thus \mu, with dominant processes including phonon scattering, which increases with temperature due to lattice vibrations; impurity scattering from dopants or defects, prominent at low temperatures; and surface scattering in thin films or nanostructures.^[66] These contributions combine via Matthiessen's rule, approximating the total scattering rate as \frac{1}{\tau} = \sum_i \frac{1}{\tau_i}, assuming independent processes.^[67] This rule enables decomposition of mobility into individual components, aiding material optimization, though it breaks down when interactions between mechanisms are strong, such as in highly disordered systems. The Hall effect provides a key probe of carrier properties, generating a transverse voltage across a current-carrying sample in a perpendicular magnetic field, with the Hall coefficient R_H = \frac{1}{n e} for single-carrier types (negative for electrons, positive for holes). This yields carrier density n and, combined with conductivity, mobility \mu = \sigma |R_H| (where \sigma is conductivity), revealing carrier type and concentration non-destructively.^[69]^[70] In disordered or low-temperature regimes, transport deviates from band-like drift, with hopping conduction dominating where carriers tunnel between localized states. Variable-range hopping (VRH), proposed by Mott, optimizes over distance and energy barriers, yielding conductivity \sigma \propto \exp\left[-(T_0/T)^{1/4}\right] at low T, prevalent in amorphous semiconductors. At nanoscale dimensions, when device size falls below the mean free path (tens of nm in clean materials), ballistic transport emerges, where carriers traverse without scattering, enabling quantum-coherent effects and high-speed devices.^[71] Under high electric fields, carrier heating leads to velocity saturation at v_{sat} \approx 10^7 cm/s in semiconductors like silicon, due to enhanced optical phonon emission, limiting current scaling in transistors.^[72] Hot carriers, with energies exceeding thermal equilibrium, further complicate transport via impact ionization or nonlocal effects.^[73] Mobility is measured via Hall effect for steady-state values or time-of-flight (TOF) techniques, where a light pulse generates carriers that drift across a sample under bias, yielding transit time t_{tr} = L / (\mu E) ( L sample thickness).^[74]^[75] Standard units are cm²/V·s, with typical values ranging from 100–1000 in bulk silicon to over 10^5 in 2D materials. In graphene, record transport mobilities have exceeded 10^7 cm²/V·s as of 2025, achieved via advanced techniques including encapsulation in hexagonal boron nitride to minimize scattering.^[76]

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Making it work - ITER
The helium nucleus carries an electric charge that is subject to the magnetic fields of the tokamak, keeping it confined within the plasma where it contributes ...Missing: carriers | Show results with:carriers
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Debye Shielding
The shielding of an external electric field from the interior of a plasma can be viewed as a result of high plasma conductivity.
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[PDF] IONIZATION, SAHA EQUATION
It is customary to express the ionization energy in electron volts, 1eV = 1.602 × 10−12 erg. Ionization of the most abundant elements, hydrogen and helium, is ...Missing: generation | Show results with:generation
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[PDF] Plasma ionization. Saha equation.
The Saha equation describes ionization of plasma in thermal equilibrium. When plasma is not in thermodynamic equilibrium it is important to study elementary ...Missing: generation | Show results with:generation
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[PDF] Plasma transport in magnetic field. Ambipolar diffusion.
Fully-ionized plasma is intrinsically ambipolar. Electrons and ions diffuse at the same rate because of quasineutrality.
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[PDF] On the electrical conductivity of plasmas and metals - arXiv
This paper comprises a pedagogical review of the Ziman formula, and various generalizations of it, for the static conductivity of liquid metals and plasmas, ...
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Magnetic control of tokamak plasmas through deep reinforcement ...
Feb 16, 2022 · Nuclear fusion using magnetic confinement, in particular in the tokamak configuration, is a promising path towards sustainable energy.
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Parallel plasma loops and the energization of the solar corona - arXiv
May 31, 2022 · Abstract:The outer atmosphere of the Sun is composed of plasma heated to temperatures well in excess of the visible surface.
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Plasma etching and ion implantation on silicon, characterized by ...
Plasma etching and ion implantation lead to changes of the electronic and thermal properties of semiconductor materials, which have been measured with the ...
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[PDF] Recent innovations to advance space electric propulsion technologies
Dec 16, 2024 · We discuss the recent advances in the application of advanced rotating magnetic field systems for space propulsion, condensable propellant ...
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[PDF] What is a Quasi-Particle? * 1
Quasi-particles are elementary excitations in interacting systems, playing the same role as excited electrons and holes, and are long-lived, weakly interacting.
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[PDF] Quasiparticles in condensed matter systems
Quasiparticles are a powerful concept in condensed matter quantum theory, existing in weakly excited states, and are useful for describing many-body states.
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[PDF] DAMTP - 2. Band Structure
Bloch's theorem is telling us that this doesn't happen: instead the plane wave states eikx are altered only by a periodic function u(x), sometimes referred to ...
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[PDF] THE EFFECTIVE MASS THEORY - s2.SMU
In this presentation, the effective mass theory (EMT) for the electron in the crystal lattice will be introduced. The dynamics of the electron in free space and ...
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Basic Parameters of Gallium Arsenide (GaAs)
Effective electron mass m · 0.063m ; Effective hole masses m · 0.51m ; Effective hole masses m · 0.082m ; Electron affinity, 4.07 eV ; Lattice constant, 5.65325 A.
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Electrons in lattice fields: Advances in Physics: Vol 3, No 11
Jun 2, 2006 · Electrons in lattice fields. H. Fröhlich. Department of Theoretical Physics, University of Liverpool. Pages 325-361 | Published online: 02 Jun 2006.
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Anyons and the quantum Hall effect - a pedagogical review - arXiv
Nov 29, 2007 · In this paper we present the concept of anyons, we explain why the observation of the fractional quantum Hall effect almost forces the notion of anyons upon us.
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Magnons – Knowledge and References - Taylor & Francis
Magnons are quasiparticles that represent quantized spin waves and are completely analogous to phonons. They are defined by the collective motion of a large ...
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A new Majorana platform in an Fe-As bilayer superconductor - Nature
Nov 10, 2020 · The iron-chalcogenide superconductor Fe(Te,Se) and its analogous compounds have been found to be able to host isolated Majorana zero modes (MZMs) ...
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Majorana zero modes in impurity-assisted vortex of LiFeAs ... - Nature
Jul 6, 2021 · The iron-based superconductor is emerging as a promising platform for Majorana zero mode, which can be used to implement topological quantum ...
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Carrier Mobility - an overview | ScienceDirect Topics
Using the average carrier “flight” time τsc between two scatter events, the Drude model simply writes the carrier mobility as. (3.26) μ = τ s c q m n. with ...
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Metals: the Drude model of electrical conduction - DoITPoMS
The Drude model is a simplistic model for conduction. It uses classical mechanics, and treats the solid as a fixed array of ions, with electrons not bound.
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Drude model - Open Solid State Notes
Here, we defined the mobility ... So by measuring the Hall voltage and knowing the electron charge, we can determine the density of free electrons in a material.
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3.3.2 Mobility Degradation due to Scattering - IuE
Carrier-carrier scattering significantly influences the characteristics of SiC high-power bipolar devices at high current ratings.
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Validity of Matthiessen's rule for calculating electron mobility in Ga 1
Oct 1, 1985 · Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor. J ...<|control11|><|separator|>
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Reporting Hall effect measurements of charge carrier mobility in ...
Jul 17, 2024 · Hall effect measurements can be used to evaluate the charge carrier density (n) and mobility (µ) of semiconductor materials1,2,3,4,5,6.
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Two-Parameter Quasi-Ballistic Transport Model for Nanoscale ...
Jan 24, 2019 · In nanoscale conductors that have channel lengths comparable to the mean free path of carriers, transport approaches the ballistic limit. A ...
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Velocity Saturation - an overview | ScienceDirect Topics
107 cm/s at high field. This value is approximately 6 times higher than the saturation velocity in conventional semiconductors. The saturation in a field ...
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3.3.3 High-Field Mobility and Velocity Saturation - IuE
The heating of free carriers at high electric fields results in a saturation of the drift velocity originating from various scattering mechanisms.
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Hall Effect Measurements Essential for Characterizing High Carrier ...
A Hall effect measurement system is useful for determining various material parameters, but the primary one is the Hall voltage (VH). Carrier mobility, carrier ...
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Time‐of‐Flight Method for Determining the Drift Mobility in Organic ...
Jul 26, 2021 · The time-of-flight (TOF) method is one of the techniques used for the measurement of the drift mobility of charge carriers, unlike the microwave conductivity ...
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Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect Of ...
Jul 19, 2023 · It is found that single crystalline graphene grown on Ge(110) possesses a maximum carrier mobility of over 100 000 cm2 V−1 s−1 at low ...<|control11|><|separator|>