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Interposer

An interposer is an electrical interface that routes high-speed signals between multiple semiconductor dies in advanced packaging configurations, such as 2.5D integrated circuits, acting as a conduit to enable heterogeneous integration of chips on a common platform.^[1] Typically fabricated from materials like silicon, glass, or organic substrates, it features redistribution layers (RDLs) and microbumps to facilitate dense interconnections while minimizing signal delay and power consumption; silicon interposers additionally incorporate through-silicon vias (TSVs), whereas glass and organic types use alternative via technologies such as through-glass vias or laser-drilled vias.^[2] Interposers bridge the gap between individual dies and the package substrate, allowing side-by-side placement of logic, memory, and other components to achieve higher performance than traditional monolithic designs.^[3] Silicon interposers, the most established type, have been in commercial use for over a decade, leveraging mature front-end semiconductor processes to support fine-pitch wiring and active elements like embedded power converters.^[4]^[2] They are pivotal in technologies such as TSMC's CoWoS (Chip on Wafer on Substrate), where they connect high-bandwidth memory (HBM) stacks to GPUs or AI accelerators, reducing resistance-capacitance (RC) delays and enabling larger reticle-limited dies.^[1] Organic and glass alternatives offer cost advantages and lower power loss for high-frequency applications, though silicon remains dominant due to its precision and compatibility with existing fabrication tools.^[4] Emerging variants, including silicon bridges and RDL-based interposers, provide flexibility for thinner profiles and improved thermal management in high-performance computing (HPC) and data center environments.^[3] The adoption of interposers has accelerated with the shift from Moore's Law scaling to advanced packaging, driven by demands for chiplet architectures in AI, 5G, and automotive applications.^[4] Key benefits include reduced size, weight, and power (SWaP), as well as support for hybrid bonding techniques that achieve sub-micron pitches for ultra-high-density integration.^[3] However, challenges persist, such as high manufacturing costs for silicon variants and the need for specialized equipment, prompting ongoing innovations in scalable, low-loss materials like fused silica.^[2] As semiconductor complexity grows, interposers are expected to play a central role in enabling multi-die systems that outperform single-chip solutions in efficiency and bandwidth.^[1]

Overview

Definition

An interposer is an intermediate dielectric layer or substrate that enables high-density electrical interconnections between multiple semiconductor dies or chips in a single package, typically serving as a passive platform, although advanced variants may include active circuitry such as embedded power converters.^[5]^[6] This structure typically consists of a thin silicon or alternative material base with redistribution layers (RDLs) and through-vias, allowing for precise routing of signals and power at the die level.^[7] Key characteristics of interposers include their slim profile, often thinned to 50-100 μm to minimize package height while maintaining structural integrity, and fine-pitch routing capabilities with line/space dimensions in the range of 10-40 μm, which support the integration of diverse chiplets.^[8] These features facilitate heterogeneous integration by accommodating chips with varying process nodes, I/O requirements, and functionalities on a common platform.^[9] In contrast to traditional printed circuit boards (PCBs) or organic substrates, which are limited to coarser interconnect pitches in the hundreds of micrometers, interposers provide micro-scale connections essential for advanced packaging technologies like 2.5D integration.^[10] The term "interposer" originated in the early 2000s amid the development of 2.5D and 3D integrated circuits (ICs), where it described this intermediary layer bridging active dies and the package substrate.^[11]

Function in Semiconductor Packaging

In semiconductor packaging, interposers primarily function as an intermediary bridge in multi-die systems, facilitating high-speed electrical routing between integrated circuit dies, efficient power delivery networks, and effective thermal management to dissipate heat from densely packed components.^[12] This role is essential in 2.5D architectures, where the interposer acts as a wide, low-power conduit for signals, minimizing resistance and capacitance delays while providing mechanical support for planar die arrangements.^[1] By enabling dense interconnects, interposers enhance overall system performance without requiring direct die-to-substrate connections.^[13] Integration occurs through fine-pitch micro-bumps or copper pillars that attach dies to the interposer's surface, combined with redistribution layers (RDLs) for horizontal signal routing and through-silicon vias (TSVs) or similar through-vias for vertical electrical connectivity across the interposer's layers.^[12] These mechanisms allow for precise alignment and high-density bonding, supporting multi-layer structures that separate signal, power, and ground planes to maintain integrity.^[1] In some configurations, controlled collapse chip connection (C4) bumps may link the interposer to the package substrate, further extending connectivity.^[13] Performance benefits include bandwidth densities approaching 450 Gb/s per mm along interposer edges, enabling terabit-scale aggregate throughput in advanced setups, while reducing latency relative to wire-bonding by shortening signal paths and eliminating longer wire loops.^[13] This results in lower RC delays and improved signal integrity for high-frequency operations.^[12] As a key enabler for heterogeneous integration, interposers permit the co-packaging of dies from disparate fabrication processes—such as logic processors, high-bandwidth memory, and analog components—into a unified module, optimizing system-level efficiency and scalability.^[1]^[12]

History

Early Developments

The concept of interposer technology emerged within the broader context of three-dimensional integrated circuit (3D IC) research during the 1990s, driven by efforts to extend Moore's Law beyond traditional planar scaling limitations through vertical stacking of silicon layers. DARPA sponsored key academic initiatives, such as grants to Stanford University for monolithic 3D IC exploration, emphasizing heterogeneous integration to enhance performance and density in semiconductor systems. Academic groups, including those at Tohoku University in Japan, began investigating stacked silicon structures to address interconnect delays and power consumption issues inherent in two-dimensional designs.^[14] Key milestones in the 1990s included advancements in through-silicon via (TSV) technology, which served as an enabler for interposer-based stacking by providing vertical electrical connections through silicon substrates. The introduction of Bosch deep reactive ion etching (DRIE) in the mid-1990s facilitated precise via fabrication.^[15] In the early 2000s, prototypes advanced through collaborations such as between the Fraunhofer Institute and Infineon, which demonstrated die-to-substrate stacking using TSVs for multi-chip modules, achieving fine-pitch alignments on the order of 10-50 μm.^[16] In the 2000s, IBM researchers, building on earlier patents, developed practical TSV prototypes achieving diameters as small as 0.14 μm by the late 2000s, focusing on high-density interconnections for multi-chip modules.^[17] Influential publications, including proposals in IEEE journals around 2001, highlighted advancements in 3D integration, with Mitsumasa Koyanagi's work on three-dimensional LSI chips using TSVs advocating for stacked architectures to realize "system-on-silicon" concepts. The International Technology Roadmap for Semiconductors (ITRS) from 2003 onward incorporated 3D integration strategies, projecting them as essential for heterogeneous systems to mitigate scaling challenges in interconnects and packaging.^[18] These efforts were supported by DARPA programs like Chip-to-Chip Optical Interconnects (C2OI), fostering industry-academia partnerships.^[16] Early developments primarily addressed initial challenges in die stacking, such as precise alignment for wafer-to-wafer or chip-to-wafer bonding, where misalignments exceeding 1 μm could degrade yields in high-density configurations. Interposers provided a passive silicon platform to redistribute signals and improve thermomechanical stability, overcoming direct stacking limitations without requiring advanced active alignment tools.^[16] TSV technology enabled these interposers by allowing vertical routing, though detailed fabrication aspects evolved later.^[15]

Commercial Adoption

The commercial adoption of interposers began in the early 2010s, driven by the need to overcome limitations in traditional semiconductor scaling for high-performance applications. TSMC launched its Chip on Wafer on Substrate (CoWoS) platform in 2012, enabling the integration of multiple dies via silicon interposers, with the first volume production achieved in 2013 for Xilinx's 28nm all-programmable 3D IC families.^[19] This marked a pivotal shift toward 2.5D packaging in foundry services, allowing higher bandwidth connections without relying solely on Moore's Law transistor scaling.^[20] A landmark product was AMD's Fiji GPU, released in 2015 as part of the Radeon R9 Fury series, which was the first commercial graphics processor to incorporate a silicon interposer for stacking high-bandwidth memory (HBM).^[21] The interposer facilitated ultra-high-speed data transfer between the GPU die and four HBM stacks, achieving bandwidths up to 512 GB/s while reducing power consumption compared to prior GDDR5-based designs.^[22] This implementation demonstrated the practical viability of interposers for consumer high-end products, paving the way for broader GPU and accelerator adoption. Intel proposed the Embedded Multi-die Interconnect Bridge (EMIB) technology in 2008 as a cost-effective alternative to full silicon interposers, focusing on localized high-density bridges within organic substrates.^[20] The technology was formally announced in 2014 and first adopted in products like the Stratix 10 FPGA in 2015, enabling heterogeneous integration for data center and networking applications.^[23] By 2017, EMIB was in volume shipment, supporting up to 1,000 I/Os per mm² in bridge areas.^[24] The primary drivers for interposer adoption were the escalating demands for bandwidth and latency reduction in GPUs, CPUs, and AI accelerators, as traditional bus architectures struggled with the end of easy dimensional scaling around 2010.^[25] Foundries saw rapid growth from 2010 to 2015, with interposers becoming integral to high-performance computing platforms. By 2020, they were utilized in over 20% of high-end chips, particularly in AI and HPC segments, reflecting a market expansion from niche to mainstream.^[26] Post-2020, interposer adoption surged with TSMC's CoWoS variants, such as CoWoS-S enabling NVIDIA's A100 GPU in 2020 and subsequent evolutions like CoWoS-R and CoWoS-L supporting HBM3E/HBM4 integration in Blackwell GPUs by 2024–2025, driving further growth in AI workloads. As of November 2025, advanced interposer-based packaging accounts for over 30% of high-performance chips.^[27] Key players included TSMC, which dominated with CoWoS for NVIDIA and AMD GPUs; Samsung, advancing interposer tech for its Exynos and memory-integrated SoCs; and Intel, leveraging EMIB internally and via foundry services.^[28] Partnerships such as GlobalFoundries with IBM, established in 2015, further accelerated development, focusing on 2.5D interposers for enterprise and automotive applications.^[29]

Types of Interposers

Silicon Interposers

Silicon interposers are constructed using a silicon substrate that incorporates through-silicon vias (TSVs) with diameters typically between 5 and 10 μm to enable vertical interconnects, paired with multiple redistribution layers (RDL) for horizontal signal routing and power distribution.^[30]^[31] The overall thickness of these interposers is usually maintained at 50-100 μm to balance mechanical stability with integration density, allowing for efficient stacking in 2.5D packaging schemes.^[7] This structure leverages the inherent properties of silicon to provide a robust platform for high-density interconnections without introducing additional active silicon dies. A key advantage of silicon interposers stems from the material's high thermal conductivity, approximately 150 W/m·K at room temperature, which facilitates superior heat dissipation compared to alternative substrates like organics or glass.^[32] Additionally, their compatibility with established CMOS fabrication processes enables seamless integration within existing semiconductor manufacturing ecosystems, reducing development costs and leveraging mature tooling.^[33] Precise lithography techniques further enhance their utility, supporting interconnect pitches below 10 μm for fine-pitch microbumping and RDL routing, which is essential for high-bandwidth applications.^[30] Silicon interposers are commonly deployed in passive configurations, where they focus solely on routing and power delivery without embedded active components, as seen in TSMC's CoWoS technology for high-performance computing integrations.^[34] In contrast, active configurations incorporate embedded logic, such as transceivers or power management circuits, directly into the interposer to enhance signal integrity and reduce latency in multi-chiplet systems.^[35] These active elements are fabricated using standard CMOS nodes, like 130 nm, to support functions including I/O buffering and electrostatic discharge protection.^[35] Yield considerations are critical in silicon interposer production, with TSV defect rates achieving as low as 0.1% per via, attributable to the high purity and uniformity of silicon substrates that minimize voids and misalignment during via filling and etching.^[36] This low defect density, often exceeding 99.9% yield for TSV chains, ensures reliable performance in large-area interposers spanning multiple reticles.^[37]

Organic Interposers

Organic interposers are substrate-based interconnect platforms constructed from laminate or build-up organic films, such as bismaleimide-triazine (BT) resin reinforced with glass fabric.^[38] These materials allow for the formation of vias through laser drilling or mechanical methods, facilitating multi-layer interconnections.^[39] Unlike thinner silicon interposers, organic variants are typically 200-500 μm thick, providing structural robustness for larger formats.^[40] Key attributes include significantly lower manufacturing costs compared to silicon interposers, making them suitable for high-volume production.^[41] They enable easier scalability to areas exceeding 1000 mm² through panel-based fabrication processes, surpassing the size limitations of silicon wafers.^[42] However, organic interposers support coarser line pitches, typically in the 40-100 μm range, which is less dense than the sub-micron capabilities of silicon but adequate for mid-range applications.^[43] Hybrid variants of organic interposers incorporate embedded silicon bridges to boost interconnect density in critical areas, combining the cost benefits of organics with localized high-performance routing.^[42] By the 2020s, organic interposers have become dominant in consumer electronics packaging, exemplified by TSMC's InFO technology employed in Apple's A-series chips.^[44]

Glass Interposers

Glass interposers represent an emerging class of interconnect platforms in advanced semiconductor packaging, leveraging the unique attributes of glass materials to enable higher integration densities and improved performance over traditional silicon or organic alternatives. These interposers typically consist of ultra-thin glass panels with thicknesses ranging from 50 to 300 μm, which provide a stable base for embedding dies and routing signals.^[45] The structure incorporates through-glass vias (TGVs) formed via laser-induced drilling or wet etching processes, allowing for fine-pitch interconnections down to 20 μm, which supports dense wiring for multi-chip modules.^[45]^[46] A key advantage of glass interposers lies in their material properties, which address limitations in thermal and electrical performance seen in other substrates. The coefficient of thermal expansion (CTE) of glass can be tailored to approximately 3-8 ppm/°C, closely matching that of silicon dies to minimize stress during thermal cycling and enhance reliability.^[45] Additionally, glass exhibits low dielectric loss, enabling efficient signal propagation for high-frequency RF applications with insertion losses below 2 dB at 10 GHz, and its inherent optical transparency facilitates precise alignment during fabrication and potential integration of photonic elements.^[45]^[46] Development of glass interposers has accelerated in recent years, with major players advancing prototypes for next-generation computing. Intel has been researching glass substrates since the early 2010s, culminating in a 2023 demonstration of multi-layer glass interposers on large 610 × 615 mm panels, targeted for deployment in the late 2020s to support AI and high-performance computing workloads.^[47]^[48] Samsung has intensified efforts since 2024, with plans to prototype glass interposers on smaller panels and supply samples to partners in 2025, aiming for commercial adoption by 2028 in AI chip packaging.^[49]^[50] Glass interposers also tackle key manufacturing challenges, particularly in scalability and mechanical stability. Compared to organic substrates, glass offers superior dimensional stability due to its higher Young's modulus, significantly reducing warpage—often limited to under 50 μm on panels up to 515 × 510 mm—through optimized CTE matching and symmetric layer designs.^[45]^[51] Furthermore, the material's compatibility with panel-level processing enables larger formats exceeding 600 mm, potentially lowering costs by increasing throughput while maintaining via yield above 95% via advanced laser techniques.^[45]^[46]

Manufacturing Processes

Materials Selection

The selection of materials for interposers in semiconductor packaging is driven by the need to ensure electrical performance, thermal compatibility, mechanical reliability, and manufacturability while accommodating high-density interconnects. Core materials typically include high-purity silicon (>99.99%), organic polymers such as polyimide for insulation layers, and glass variants like borosilicate or fused silica.^[52]^[53]^[54] Silicon provides excellent compatibility with active dies due to its established fabrication ecosystem and precise feature control, while organic polymers offer flexibility and cost advantages in less demanding applications.^[12] Glass materials, with their tunable compositions, bridge the gap by providing superior dimensional stability and low-loss signal propagation compared to traditional organics.^[45] Key selection criteria focus on matching the coefficient of thermal expansion (CTE) to minimize warpage during thermal cycling, typically targeting values between 3 and 17 ppm/°C across materials to align with silicon dies (CTE ≈ 2.6 ppm/°C) and organic substrates.^[55] Low dielectric constant (k < 3.5) is prioritized for signal integrity in high-frequency applications, as seen in polyimides (k ≈ 2.8–3.2) and fused silica (k ≈ 3.8), reducing insertion loss and crosstalk.^[56] Mechanical strength exceeding 200 MPa ensures structural integrity under stress, with silicon exhibiting high tensile strength (>7 GPa in single-crystal form) and borosilicate glass offering robust fracture toughness around 0.7–0.8 MPa·m^(1/2).^[57] These properties collectively enable interposers to support fine-pitch routing without compromising reliability. Interconnect metals, primarily copper for redistribution layers (RDL) and through-silicon vias (TSVs), are chosen for their high electrical conductivity of 58 MS/m, facilitating low-resistance paths in dense configurations.^[58] Underfill epoxies, such as capillary-flow formulations, provide robust bonding between the interposer and attached components, enhancing mechanical adhesion and thermal stress relief with shear strengths often exceeding 20 MPa.^[59] Environmental considerations mandate lead-free compliance under RoHS standards, effective since July 1, 2006, which has driven the adoption of tin-silver-copper alloys in solders and halogen-free epoxies to restrict hazardous substances in interposer assemblies.^[60]

Fabrication Techniques

Fabrication of interposers involves a series of precision-engineered steps to create high-density interconnect structures, starting from substrate preparation and culminating in fine-pitch wiring layers. The process emphasizes control over aspect ratios, material deposition uniformity, and defect minimization to support advanced packaging integration.^[61] Wafer preparation begins with selecting and cleaning silicon or alternative substrates, often 300 mm in diameter, to ensure surface flatness and contamination-free conditions for subsequent processing. This step includes oxidation or deposition of initial insulating layers to facilitate via etching and isolation. Via formation follows, typically employing deep reactive ion etching (DRIE) for through-silicon vias (TSVs) in silicon interposers, achieving depths of 50-100 μm with high aspect ratios up to 10:1 for vertical interconnects.^[62]^[61]^[62] Metallization of the vias is accomplished through electroplating of copper (Cu), which fills the etched structures after seed layer deposition via physical vapor deposition, providing low-resistance electrical paths with resistances around 5 mΩ per via. Redistribution layers (RDLs) are then patterned using photolithography, involving photoresist coating, exposure, development, and etching or plating to define fine interconnect lines and pads, enabling signal routing across the interposer surface.^[62]^[61] Advanced methods tailor the process to specific materials; for silicon interposers, via-middle integration embeds TSVs during front-end processing, while via-last approaches etch and fill after device layers for greater flexibility in thin substrates. Glass and organic interposers leverage panel-level fabrication on 510x515 mm formats to reduce costs through economies of scale, using laser-induced etching for through-glass vias (TGVs) or photo-imageable dielectrics for organic vias, followed by Cu plating for metallization.^[61]^[46]^[63] Yield optimization relies on metrology tools such as scanning electron microscopy (SEM) for defect detection in vias and RDL features, ensuring process windows support 10 μm line widths with minimal variation in critical dimensions. These techniques maintain high throughput on scales from traditional 300 mm wafers to larger panels, addressing warpage and alignment challenges in high-volume production.^[62]^[61]

Applications

2.5D Integration

In 2.5D integration, multiple semiconductor dies, such as logic processors and memory stacks, are placed coplanar on a shared interposer substrate, typically silicon, to enable high-performance heterogeneous integration. The dies are interconnected through micro-bumps with pitches as fine as 40-55 μm, routed via through-silicon vias (TSVs) embedded in the interposer, which provide dense, low-latency signaling paths between components.^[64]^[65] This architecture facilitates the side-by-side placement of high-bandwidth memory (HBM) modules adjacent to a central logic die, such as a GPU, allowing for efficient data transfer without the vertical stacking complexities of 3D integration.^[66] Prominent examples of 2.5D interposer applications include NVIDIA's Tesla V100 GPU, introduced in 2017, which employs TSMC's CoWoS silicon interposer to mount the GPU die alongside four HBM2 memory stacks, achieving 900 GB/s of aggregate memory bandwidth. Similarly, AMD's Radeon VII graphics card, released in 2019, utilizes a silicon interposer in a CoWoS configuration to integrate the 7 nm Vega GPU with 16 GB of HBM2 across a 4096-bit interface, delivering 1 TB/s bandwidth for compute-intensive workloads. More recent implementations include NVIDIA's H100 GPU (2022), which uses a CoWoS silicon interposer to connect the GPU die with six HBM3 memory stacks, providing up to 3 TB/s bandwidth for AI training and inference.^[67]^[68]^[69]^[70] This approach yields significant performance advantages over traditional multi-chip modules (MCMs), including a reduced form factor through shorter interconnect lengths that minimize signal latency and power consumption, while enabling support for over 1000 I/Os per die to handle high-bandwidth demands.^[71]^[72] By replacing longer MCM traces with interposer-based routing, 2.5D designs can achieve up to 2-3 times higher interconnect density, enhancing overall system efficiency in applications like AI accelerators and high-performance computing.^[73] The integration flow for 2.5D packages begins with die attach, where individual dies are aligned and bonded to the interposer using reflow-soldered micro-bumps for electrical and mechanical connection. Underfill material is then dispensed and cured around the bumps to reinforce reliability, reduce thermal expansion mismatches, and prevent delamination under stress. Finally, a thermal lid or integrated heat spreader is attached atop the assembly, often with thermal interface material, to efficiently dissipate heat from the densely packed dies and maintain operational temperatures below critical thresholds.^[74]^[75]^[76]

3D IC Stacking

In 3D IC stacking, interposers serve as a foundational base layer that supports the vertical integration of multiple dies, enabling high-density interconnections via through-silicon vias (TSVs) or hybrid bonding methods. This configuration allows for the precise alignment and electrical connectivity of stacked components, such as logic and memory dies, in a hybrid approach that combines planar interposer routing with vertical stacking to optimize system performance. By acting as an intermediary substrate, the interposer accommodates heterogeneous dies with varying pitches and materials, facilitating direct or indirect bonding while distributing power and signals efficiently across the stack.^[77] Building on 2.5D integration as a precursor, interposers in 3D stacking emphasize vertical dimension to achieve superior volume efficiency in memory-logic configurations.^[78] A prominent example is Intel's Foveros technology, introduced in 2019, which employs an active base die functioning as an embedded interposer or bridge to stack upper logic dies vertically onto a larger base containing I/O and power delivery circuitry, using TSVs for interconnection. A recent application is Intel's Lunar Lake processors (Core Ultra 200V series, released September 2024), which use Foveros to stack compute and platform tiles on an active interposer for improved power efficiency in mobile AI workloads. Similarly, TSMC's System on Integrated Chips (SoIC) platform leverages interposers in conjunction with wafer-to-wafer or die-to-wafer hybrid bonding and TSVs to enable 3D stacking of logic and memory dies, creating compact system-on-chips for high-performance computing applications.^[79]^[80]^[81] These interposer-based 3D stacking methods deliver over 10x interconnect density relative to traditional 2D ICs, primarily through finer-pitch hybrid bonding interfaces that support quasi-monolithic integration. Additionally, shorter vertical interconnect paths reduce signal latency and resistive losses, yielding power reductions of 20-30% in stacked logic-memory systems compared to planar designs.^[82] However, achieving reliable 3D stacking with interposers demands stringent alignment tolerances below 1 μm to prevent misalignment in bonding interfaces, which can compromise electrical integrity and yield.^[83]

Advantages and Challenges

Key Benefits

Interposers provide significant performance advantages in semiconductor packaging, primarily through their ability to support much higher I/O densities compared to traditional organic substrates. Silicon interposers, for instance, can achieve interconnect densities up to 250 I/O per mm per layer, representing approximately 10 times the density of organic interposers at 25 I/O per mm per layer, which enables more efficient integration of multiple dies.^[84] This high density facilitates shorter interconnect paths, reducing signal latency to sub-nanosecond levels and improving overall signal integrity by minimizing parasitic effects and electromagnetic interference.^[1]^[85] Economically, interposers enable the adoption of chiplet-based designs, which decompose complex system-on-chips (SoCs) into modular components, thereby reducing non-recurring engineering (NRE) costs associated with full monolithic fabrication.^[6]^[86] This modularity allows for the reuse of pre-verified chiplets across multiple products, lowering mask and design verification expenses, particularly beneficial for custom SoCs in high-volume applications such as AI servers where return on investment is realized through scaled production.^[87]^[88] In terms of reliability, interposers enhance thermal dissipation due to materials like silicon offering superior thermal conductivity—around 150 W/mK—compared to organic substrates, allowing for improved heat flux handling in stacked configurations without excessive temperature rises.^[89] This improved heat management contributes to longer mean time between failures (MTBF) in 3D stacked systems by reducing thermo-mechanical stresses and warpage, as the coefficient of thermal expansion matches that of the silicon dies.^[90]^[91] Quantitatively, interposer-based packaging in 2025 products, such as those integrating high-bandwidth memory (HBM), supports aggregate bandwidths exceeding 2 TB/s, as demonstrated in advanced AI accelerators like those using HBM4 with up to 2.8 TB/s per stack.^[92]^[93]

Major Limitations

One of the primary drawbacks of silicon interposers is their significant contribution to overall package costs due to the complex fabrication processes involved, including through-silicon via (TSV) formation and multi-layer metallization.^[94] Yield losses further exacerbate this, with TSV defects typically resulting in 1-5% reductions in manufacturing efficiency, as defects introduced during etching or filling can render large interposer areas unusable.^[95] Technically, interposers suffer from warpage induced by coefficient of thermal expansion (CTE) mismatches, particularly between the low-CTE silicon (approximately 3 ppm/°C) and higher-CTE organic substrates (14-17 ppm/°C), which can lead to mechanical stress and alignment issues during assembly.^[96] Thermal management poses another challenge, with hotspots causing temperature rises up to 100°C in high-power applications, potentially degrading performance and reliability due to uneven heat dissipation across the interposer.^[97] Additionally, size limitations in basic configurations restrict silicon interposers to reticle sizes around 800-900 mm², though stitching enables up to 2500 mm² or larger as of 2025, constraining the number of dies that can be integrated without advanced techniques.^[98]^[27] Scalability issues arise as interposer complexity grows with additional metallization layers or larger areas, increasing fabrication time and defect risks, while heavy reliance on specialized foundries creates supply chain vulnerabilities and delays.^[41] Common mitigation strategies include hybrid interposer designs that combine silicon with organic or glass elements to balance CTE and reduce warpage, as well as advanced underfill materials that improve adhesion and thermal stress distribution.^[96] For cost reduction, panel-level processing enables higher throughput by fabricating multiple interposers simultaneously on larger substrates, potentially lowering per-unit expenses significantly.^[99]

Future Developments

Emerging Technologies

Optical interposers represent a significant advancement in interposer technology by integrating photonic waveguides to enable light-based signaling, which promises dramatically reduced latency and power consumption compared to traditional electrical interconnects. These structures use silicon photonics to route optical signals across the interposer, allowing for high-bandwidth data transfer in multi-chip packages. In 2023, Ayar Labs demonstrated prototypes of their TeraPHY optical I/O chiplets, which incorporate photonic integrated circuits and achieve up to 4 Tbps bidirectional bandwidth per chiplet, offering 5-10x higher bandwidth than conventional electrical solutions while reducing power usage by 3-5x.^[100]^[101] Active interposers extend this innovation by embedding transistors and active circuitry directly into the interposer substrate, enabling functions such as protocol conversion and signal conditioning between disparate chiplets. This allows for bridging incompatible interfaces in heterogeneous integrations, improving overall system efficiency. Research at imec, ongoing since at least 2021, has explored active interposers in 3D system-on-chip designs, where the interposer acts as a data gateway with integrated active devices to connect high-performance dies and stacked memory, facilitating seamless heterogeneous integration.^[102]^[42] At the nanoscale, advances in materials are addressing resistance and flexibility challenges in interposer fabrication. Carbon nanotube (CNT) vias have been investigated as replacements for copper through-silicon vias (TSVs), offering lower electrical resistance at sub-100 nm scales due to their superior conductivity and reduced electromigration. For instance, CNT-Cu composite TSV interposers have demonstrated copper-level electrical performance with enhanced reliability for 2.5D packaging applications.^[103]^[104] Similarly, graphene-based redistribution layers (RDL) are emerging for their flexibility and thermal conductivity, enabling bendable interposers suitable for advanced packaging in high-performance computing; composite graphene-copper RDL structures have shown improved thermal management in fan-out packages, supporting flexible designs with multiple layers.^[105] The integration of these innovations with chiplet architectures is standardized by the Universal Chiplet Interconnect Express (UCIe) specification, released in March 2022, which defines a die-to-die interface for modular chiplet systems using interposers. UCIe supports high-bandwidth, low-latency connections across silicon interposers and organic substrates, promoting interoperability and scalability in multi-die packages for AI and HPC applications.^[106]^[107]

Industry Trends

The interposer market continues to experience robust growth in 2025 and is projected to grow further, driven primarily by surging demand in artificial intelligence and machine learning applications, which leverage 2.5D integration for high-bandwidth memory stacking. In 2024, AI/ML chip packaging revenue reached $6.9 billion, marking a 33.1% year-over-year increase, with over 94% of AI training chips employing 2.5D interposer-based packaging integrated with HBM stacks.^[108] The global interposer market is projected to reach $1.18 billion by 2030, growing at a compound annual growth rate (CAGR) of 18% from 2023, fueled by advancements in semiconductor performance requirements for AI accelerators and telecommunications infrastructure, including 5G and emerging 6G networks.^[109] Asia Pacific remains the dominant region, accounting for the largest market share due to concentrated foundry ecosystems and rapid adoption of digital technologies.^[109] Supply chain dynamics have shifted toward outsourced semiconductor assembly and test (OSAT) providers, which now handle a significant portion of interposer production to enable scalable advanced packaging. Leading OSATs such as ASE Technology and Amkor Technology dominate this segment, offering solutions like fan-out chip-on-substrate (FOCoS) and high-density fan-out (HDFO) that incorporate interposers for high-performance computing applications.^[110] This outsourcing trend supports cost-effective panel-level processing, with ASE advancing 300mm and 600mm formats for 2.5D/3D integration.^[110] In the United States, the 2022 CHIPS and Science Act has catalyzed domestic investments, exemplified by Amkor's expanded $7 billion commitment to an advanced packaging and test campus in Arizona, with groundbreaking in October 2025 and production set to commence in 2028, bolstering U.S. fabrication capabilities for interposer-related technologies.^[111] Standardization efforts by organizations like JEDEC are addressing interposer specifications to facilitate interoperability in 2.5D and 3D stacking, particularly for high-bandwidth memory interfaces that rely on interposers. JEDEC's ongoing work on HBM3 and related standards, including channel definitions and electrical characteristics, supports precise integration in multi-die systems.^[112] Concurrently, there is a growing industry push toward sustainability in interposer materials, emphasizing recyclable organic substrates to reduce environmental impact and manufacturing waste. Initiatives like TOPPAN's coreless organic interposer, which uses low coefficient of thermal expansion (CTE) reinforcements for finer pitches and standalone inspection, minimize defects and chip disposal losses.^[113] The JOINT3 consortium, launched in September 2025 and involving 27 global firms led by Resonac, further advances panel-level organic interposers (515 x 510mm) with prototype production planned for 2026, promoting efficient, eco-friendly alternatives to silicon-based designs.^[114]^[115] Geopolitical tensions have prompted diversification of interposer supply chains away from Asia-centric production, with emerging hubs in the European Union and India gaining momentum by 2027. The 2023 EU-India Memorandum of Understanding on semiconductors fosters collaboration in research, innovation, and robust supply chain development, including talent training and subsidy transparency to de-risk dependencies.^[116] In India, government incentives matching up to 50% of investments (totaling $10 billion) are enabling expansion in assembly, test, and packaging facilities, with projections for 5 such sites and 2-3 legacy fabs operational by 2027, supported by initiatives like Micron's $2.75 billion ATP plant in Gujarat.^[117] These efforts aim to create regional ecosystems, enhancing resilience amid global trade shifts.^[117]

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Jan 3, 2024 · The interposer has micro-bumps (10µm diameter, 20µm pitch) and through-silicon vias (10µm diameter, 40µm pitch). • Embed IPECs in cavities in ...
[7]
An ultra-thin interposer utilizing 3D TSV technology - ResearchGate
Sep 7, 2025 · To achieve ultra small form factor package solution, an ultra-thin (50μm) Si interposer utilizing through-silicon-via (TSV) technology has ...
[8]
Silicon interposer and TSV signaling - ResearchGate
Interposer technology enables die-level packaging (i.e., IC-scale critical dimensions), supporting heterogeneous integration and terabyte/s high-bandwidth ...
[9]
Embed glass interposer to substrate for high density interconnection
Interposer provides a high density interconnection with fine line and small via that cannot be matched by current laminate substrate technology. We have ...
[10]
[PDF] 1 3D IC Integration Since 2008 - Wiley-VCH
Mar 31, 2014 · The term “2.5D” is usually credited to Ho Ming Tong from Advanced. Semiconductor Engineering (ASE), who in 2009 (or even earlier) declared that ...
[11]
Silicon Interposer: Ultimate Guide - AnySilicon Semipedia
These interposers act as a bridge for signals and power between various integrated circuits (ICs) in a single package and the package substrate. They serve as a ...
[12]
Interposer - an overview | ScienceDirect Topics
An interposer is defined as a substrate used in the packaging industry to interconnect various components, such as an integrated circuit (IC) to a package or ...
[13]
Three-dimensional integrated circuit - Wikipedia
This monolithic 3D IC technology has been researched at Stanford University under a DARPA-sponsored grant.Missing: origins | Show results with:origins
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Fine-Pitch 3D Stacked Technologies for High-performance ...
Mar 31, 2021 · Towards the end of the 1990s, Mitsumasa Koyanagi´s team at Tohoku University succeeded in fabricating 3D ICs using through-silicon vias (TSVs) ...Missing: origins | Show results with:origins
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Who Invented the Through Silicon Via (TSV) and When? - 3D InCites
Apr 24, 2010 · Most people in the Electronics Industry consider Merlin Smith and Emanuel Stern of IBM the inventors of TSV based on their patent “Methods of Making Thru- ...
[16]
Microsystems using three-dimensional integration and TSV ...
Apr 1, 2019 · The emergence of Bosch DRIE technology in the mid of 1990s made etching of vertical and deep vias in silicon wafers into reality, enabling high ...
[17]
(PDF) Three-dimensional silicon integration - ResearchGate
This paper 1) reviews technology integration from a historical perspective, 2) describes industry-wide progress in 3D technology with examples of TSV and ...
[18]
[PDF] 2003 edition - interconnect - Semiconductor Industry Association
The model inputs are specific to the ITRS targets for layer thickness, aspect ratios and dielectric materials projected to be commercially available concurrent ...Missing: interposer | Show results with:interposer
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Xilinx and TSMC Reach Volume Production on all 28nm CoWoS
Oct 21, 2013 · SAN JOSE, Calif. and HSINCHU, Taiwan – Oct. 21, 2013 - Xilinx Inc. (NASDAQ: XLNX) and TSMC (TWSE: 2330, NYSE: TSM) today announced ...Missing: commercial launch
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Explainer on Packaging: Interposers, Bridges and Chiplets - EE Times
Nov 10, 2020 · So here is a remedial history lesson on the contribution of Adv. Packaging to Semiconductor INTEGRATION for irresponsible LOUDMOUTHS as well as ...
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IFTLE 240 AMD introduces High Bandwidth Memory (HBM) on Fiji ...
May 28, 2015 · So now the first commercial graphics products to feature HBM clearly will be AMD's R9 390X series Fiji GPU in 2015. The Rx 300 series will also ...<|control11|><|separator|>
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AMD "Fiji" HBM Implementation Detailed - TechPowerUp
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Intel Announces New Packaging and Test Technologies for Foundry ...
Aug 27, 2014 · Embedded Multi-die Interconnect Bridge (EMIB), available to 14nm foundry customers, is a breakthrough that enables a lower cost and simpler 2.5D ...Missing: proposal 2008 adoption
[24]
Intel Aims to Drive Chiplet Standard - EE Times
Jul 26, 2018 · Intel first announced EMIB in 2014 as part of its foundry service that has yet to gain traction. So far, the technology has been used only on ...Missing: proposal adoption
[25]
The Story Behind Advanced Packaging, Heterogeneous Integration ...
Apr 6, 2020 · The introduction of AMD'S FIJI chip a few years ago marked an important technology turning point for the semiconductor industry.
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High-End Performance Packaging 2025 - Yole Group
May 19, 2025 · ◦ TSMC Interposer comparison ... ◦ Business model: Who is doing what? ◦ Mapping of players based on technology. ◦ Key players: Intel, Samsung and ...
[27]
Top Interposer and Fan-out Wafer Level Packaging Companies
Jan 30, 2024 · Key players operating in the interposer and fan-out wafer level packaging (FOWLP) market are Samsung (South Korea), Taiwan Semiconductor Manufacturing Company, ...
[28]
Packaging Takes Center Spot on Innovation Stage | GlobalFoundries
Aug 11, 2016 · In addition to TSV's in 3D, GF designs and develops 2.5D silicon interposer products in-house for volume manufacturing at OSATs, “providing the ...
[29]
Interconnect - Semiconductor Industry Association
A special case of 3D interconnect technology is the Si interposer structures that may only contain interconnect layers, although in many cases other bSoC ...
[30]
Design and Analysis of Chiplet Interfaces for Heterogenous Systems
Feb 11, 2021 · TSV diameter/depth. 10 um / 100 um. Micro-bump pitch. < 55 um. C4 bump pitch. < 150 um. Die-to-die spacing. 500 um – 4000 um. Metal layers. 4.
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Investigation of mesoporous silicon thermal conductivity
Feb 15, 2024 · The thermal conductivity of bulk silicon is about 150 W/m.K for doping around 1018 - 1019 cm−3 and can be around 140 W/m.K for higher ...
[32]
Goodbye, Motherboard. Hello, Silicon-Interconnect Fabric
Sep 24, 2019 · ... silicon interposer technology. An interposer is a thin layer of ... compatible with CMOS. For example, our group recently demonstrated ...
[33]
CoWoS® - Taiwan Semiconductor Manufacturing Company Limited
TSMC's Chip on Wafer on Substrate with Silicon Interposer (CoWoS®-S) provides best-in-class package technology for ultra-high performance computing ...<|control11|><|separator|>
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https://3dfabric.tsmc.com/english/dedicatedFoundry/technology/cowos.htm
[35]
[PDF] Through-Silicon-Via (TSV) for Silicon Package: "Via-Bridge" Approach
Our electrical measurements exhibit an average single TSV resistance below 10mOhms with excellent yield (~95% on Kelvin and 82 TSV chains), and low contact ...Missing: defect rate
[36]
[PDF] A Practical Approach to Test Through Silicon Vias (TSV) - NET
They were also quick to point out through a mathematical model that if an interposer had 1E5 TSVs, the failure rate has to be no greater than 1E-7, to avoid ...
[37]
Tech Forum: BT Substrate Enables Progress of Advanced Packaging
BT substrate, made of Bismaleimide-Triazine, is a composite laminate with glass fabric, used in advanced packaging for its high Tg and thermal resistance.
[38]
2024 irds executive packaging tutorial—part 1
o Definition—The temperature of the semiconductor junction where the transistor action occurs. It is the most critical temperature limit for ICs. o Typical ...
[39]
[PDF] Advanced Organic Substrate Technologies To Enable Extreme ...
Silicon interposer thickness is typically in the 200-500 micron range, which engenders a complex and increased warpage response as compared to typical wafer ...
[40]
Reticle Stitching Bumps Up Silicon Interposer Costs
Aug 21, 2025 · Organic interposers are much less expensive than silicon versions, but they can't provide the line pitch that silicon can. Silicon bridges are ...Missing: 20-50% | Show results with:20-50%
[41]
Big Changes Ahead For Interposers And Substrates
Mar 24, 2025 · “Active interposers can integrate embedded circuits for on-interposer signal conditioning and power regulation, improving efficiency at scale.
[42]
[PDF] Challenges to Consider in Organic Interposer HVM - iNEMI
Apr 21, 2014 · Organic Interposers. •. Under consideration as lower cost alternative to silicon interposers. – Infrastructure established. – Examples of ...
[43]
The Future Of Packaging Gets Blurry – Fanouts, ABF, Organic ...
Nov 1, 2022 · Nowadays, build-up ABF substrates have an L/S as dense as 10-micron; the Cisco research shows the organic substrate going down to 6-micron L/S.Missing: semiconductor | Show results with:semiconductor
[44]
A Review of Glass Substrate Technologies - MDPI
Industry trends show an increasing reliance on substrates and interposers for integrating multiple dies using 2D and 2.5D architectures. Redistribution layer ( ...
[45]
TGV (Through glass vias)/ Interposers - RENA Technologies
Glass as material and glass interposers manufactured out of it enable excellent dimensional stability, closely matched and tailorable coefficient of thermal ...Interposer · Glass Wafer & Glass Panel... · Rena Unique Etching...<|control11|><|separator|>
[46]
Intel Unveils Industry-Leading Glass Substrates to Meet Demand for ...
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[47]
Five facts you need to grasp to understand Intel's glass substrate
Oct 4, 2023 · Glass substrates enable a much higher interconnect density, which is crucial for power delivery and signal routing in next-generation packaging.Missing: interposer prototypes
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[News] Samsung Reportedly Eyes Glass Interposers by 2028 ...
May 26, 2025 · The South Korean tech giant intends to replace the traditional silicon interposer with a glass interposer by 2028, as the report notes.Missing: 2024 | Show results with:2024
[49]
Samsung plans to supply glass substrate samples to US companies ...
May 30, 2025 · Samsung has announced that it will supply glass substrate (glass interposer) samples to major tech companies in the US by this year.
[50]
The Race To Glass Substrates - Semiconductor Engineering
May 29, 2024 · The thermal stability of glass substrates also simplifies the design and implementation of advanced packaging solutions, allowing for tighter ...
[51]
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Silicon used in a semiconductors such as an integrated circuits (IC) requires a single crystal structure of ultra-high-purity “99.999999999%” (the so-called ...
[52]
The Basics of Polyimide｜An Explanation of how it is Used
Properties of Polyimide · (1) Excellent heat resistance and very high tensile strength at high temperatures. · (2) Electrical properties (dielectric constant, ...
[53]
Glass Core Technology - Samtec
Optoelectronics. Fused Silica. High purity material; Low dielectric constant & loss factor; Very low thermal expansion; Wide operating temp range ...
[54]
SiC Enters the Advanced Packaging Mainstage: Observing TSMC's ...
Sep 21, 2025 · In CoWoS-S, the use of silicon interposers combined with TSVs provides exceptional signal and power integrity. However, once the interposer ...
[55]
Fabrication and characterization of low-cost ultrathin flexible ...
In this paper, polyimide (PI) is proposed as an alternative to glass and silicon based interposers for cost-effective 2.5-D/3-D IC integration. The development ...
[56]
Preparation and Characterization of High Thermal Conductivity and ...
May 13, 2019 · The mechanical strength of the PI matrix was enhanced by the reinforcement materials. The tensile strength increased from 81 MPa to 145 MPa ...
[57]
Copper interconnects - IBM
IBM wowed the world in 1997 with a new breed of semiconductor made with copper, a metal whose successful application to chipmaking had eluded scientists for ...Missing: interposer | Show results with:interposer
[58]
Underfills - Henkel Adhesives
Underfills are used to enhance LGA mechanical strength and reliability. Partial underfill – Corner or edge bond underfills are more thixotropic than standard ...
[59]
IC interposers meet RoHS requirements - EDN Network
Nov 1, 2005 · A line of Pb-free IC interposers enable designers to transition from standard eutectic BGA to RoHS-compliant packaging. The devices come with a ...
[60]
A State‐of‐the‐Art Review of Through‐Silicon Vias : Filling Materials ...
Dec 1, 2024 · This review provides a comprehensive overview of through-silicon via (TSV) process optimization, various filling methodologies, and material ...
[61]
TSV based silicon interposer technology for wafer level fabrication of ...
Aug 9, 2025 · The final interposers which carry one or more IC components have lateral dimensions up to several square centimeters and thicknesses between 50- ...
[62]
[PDF] JOINT3 Establishment Press Conference - Resonac
Sep 3, 2025 · Manufacturing at the 510 x 515mm panel level addresses challenges in interposer scaling and yield. - Panel level organic interposer creates ...
[63]
Architecture, Chip, and Package Codesign Flow for Interposer ...
Aug 24, 2020 · Our design space exploration (DSE) study shows that 2.5-D integration incurs 1.29× power and 2.19× area overheads compared with 2-D counterpart.
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2.5D and 3D IC Packaging - ASE
2.5D / 3D are packaging methodology for including multiple IC inside the same package. In 2.5D structure, two or more active semiconductor chips are placed side ...
[65]
Chiplets: piecing together the next generation of chips (part I) - IMEC
Jul 16, 2024 · This article discusses both interposer and 3D integration approaches that aim to scale pitches below 1µm. This is the first part of a two ...
[66]
[PDF] NVIDIA TESLA V100 GPU ARCHITECTURE
The combination of both a new generation HBM2 memory from Samsung, and a new generation memory controller in Volta, provides 1.5x delivered memory bandwidth.Missing: silicon interposer
[67]
TSMC CoWoS Production Line at Full Capacity as Demand Increases
Apr 10, 2020 · ... Nvidia's V100 cards, which have HBM on the same silicon interposer where the GPU is. With the GPU and memory so close together, memory ...
[68]
AMD Radeon VII Specs - GPU Database - TechPowerUp
HBM2. Memory Bus: 4096 bit. Bandwidth: 1.02 TB/s. Render Config. Shading Units: 3840. TMUs: 240. ROPs: 64. Compute Units: 60. L1 Cache: 16 KB (per CU). L2 Cache ...
[69]
2D vs. 2.5D vs. 3D ICs 101 - EE Times
Apr 8, 2012 · As one example of the use of this technology, the Xilinx Virtex-7 2000T device has four FPGA dice attached to a silicon interposer, which ...
[70]
Advanced Packaging & Cooling: Architectures, Thermal ... - Uplatz
The 2.5D architecture provides a transformative improvement in memory bandwidth and power efficiency compared to traditional MCMs by replacing long, power- ...
[71]
2.5D MCM (Multi-chip Module) Technology Development for ...
2.5D silicon interposer packages have been widely adopted for high-end applications such as datacenter, networking, and artificial intelligence.Missing: benefits | Show results with:benefits
[72]
[PDF] NEPP studies on The Reliability of Flip Chip Solder Joints and 2.5 ...
Jun 17, 2020 · Chip-first completes package or interposer after dies are already attached. 1) Attach dies ... underfill, lid, and manufacturing flow process to ...
[73]
A 2.5-D Integrated Data Logger for Measuring Extreme Accelerations
Epo-Tek 353ND was used for the die attach process of the wire-bonded MEMS, and it was also used as an underfill material for the flip-chip bonded MEMS device.
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2.5D Packaging | Advanced Packaging - Caplinq
A heat sink (like a lid or cap) is often added on top of the dies to dissipate heat more effectively and protect the components. This component helps to ...
[75]
Electromagnetic Simulation And 3D-IC Interposers
Jul 11, 2022 · A key element in the technology is the interposer, which provides the mechanical means to stack die while facilitating their vertical ...
[76]
3D integration: IC stacking to extend scaling - IMEC
One way to further scale ICs and add more functionality per area, is to integrate circuits on top of each other, leveraging 2.5D or 3D connectivity.
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Advanced Packaging Innovations - Intel
Foveros Direct 3D. 3D stacking of chiplets on active base die for superior power-per-bit performance. Cu-to-Cu hybrid bonding interface ( ...
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TSMC 3DFabric® for High-Performance Computing
TSMC's SoIC technologies enable both similar and dissimilar dies stacking, greatly improving inter-chip interconnect density and reducing form factor. Backend ...
[79]
First Forays Into True 3D-IC Designs - Semiconductor Engineering
Sep 25, 2025 · ... 3D-IC compiler platform. Find part 2 of this discussion here and ... That brings 20% to 30% improved power efficiency. Technically ...
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Wafer-to-wafer hybrid bonding - IMEC
Feb 19, 2024 · To expand the application domain towards, e.g., memory-on-logic stacking, the 3D interconnect pitch must scale far below 1µm – today's state of ...
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[PDF] February • 2022 - Chip Scale Review
10X higher interconnect density for silicon. (250 IO/mm/layer) as compared to organic interposer (25 IO/mm/layer) results in the use of fewer layers in the ...
[82]
Off-chip Interconnect - Research at TSMC
Silicon interposer, high-density fine-pitch fan-out RDL and bumpless ... density, lower communication latency, and lower energy consumption per bit data.
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Architecting Interposers - Semiconductor Engineering
Oct 14, 2021 · This is an essential element of More than Moore, and the rise of chiplets will dramatically reduce NRE costs associated with this type of design ...
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[PDF] LUCIE: A Universal Chiplet-Interposer Design Framework for Plug ...
Chiplet designs significantly reduce NRE costs due to less design and verification work, lower mask costs from smaller silicon areas (assuming multi-project ...
[85]
Chiplets and Heterogeneous Packaging Are Changing System ...
The earliest example of leveraging TSV-based silicon interposer technology was the re-partitioned Xilinx FPGA. Today, this technology is most commonly referred ...
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Advanced Semiconductor Packaging Market Forecast to Grow at 7.5 ...
Apr 25, 2025 · The ultra short electrical path lowers inductance, cuts signal latency, and boosts bandwidth—precisely the performance mix demanded by AI ...
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Silicon Interposers - an overview | ScienceDirect Topics
The primary raw materials used for fabricating interposers are silicon and glass, although organic interposers are also being explored.Missing: timeline | Show results with:timeline
[88]
Reliability study for large silicon interposers report on board
Aug 9, 2025 · This paper presents a reliability study on a 15×15mm2 silicon interposer packages, 5 times larger surface than usual studies on wafer level ...Missing: MTBF | Show results with:MTBF
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Warpage and Reliability Challenges for Stacked Silicon Interconnect ...
This work studies the design constraints upon these large packages and to find that reliable packages may be achieved.
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Nandish Mehta, Sr. Research Scientist, NVIDIA Research ECTC ...
Jun 15, 2025 · ECTC 2025. Dallas ... • Si interposer allows higher bandwidth density due to denser wiring. • >2 Tb/s/mm demonstrated, scalable to >10 Tb/s/mm.
[91]
Micron's 12-Hi HBM4 Delivers 2.8 TB/s Bandwidth, 11 Gb/s Per-Pin ...
Sep 24, 2025 · We have recently shipped customer samples of our HBM4 with industry-leading bandwidth exceeding 2.8 TB/s and pin speeds over 11 Gbps." The JEDEC ...
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Opportunities for 2.5D and 3D Cost Reduction - 3D InCites
Apr 11, 2016 · Total cost increase in the 3D case is 4.9%. For the 2.5D case, the total cost increase is only 1%, with the assumption that the HBM stacks are ...
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[PDF] Cost Breakdown of 2.5D and 3D Packaging
• 98% TSV creation yield hit. • 99.5% assembly yield for each die bonding process ... 1 Silicon interposer, 1 large ASIC, and 4 HBM stacks. IMAPS 12th ...
[94]
Controlling Warpage In Advanced Packages
Jun 24, 2024 · The worst CTE mismatch is between a silicon interposer and an organic substrate. It helps to envision stacks in packaging as groups of ...
[95]
Microfluidic silicon interposer for thermal management of GaN ...
Jul 25, 2023 · It was reported that a 100 ℃ temperature rise ... Reasonable thermal management methods are significant for reducing the hot spot temperature.
[96]
Interposer size has been increased in the past few years to extend ...
For example, a maximum 300-mm 300-mm glass substrate can be produced from the most advanced 450-mm-diameter glass wafers. ...<|control11|><|separator|>
[97]
The Rise Of Panel-Level Packaging - Semiconductor Engineering
Jul 24, 2025 · “At the moment we see a lot of progress in organic interposer technology and glass core substrates, which in the end is an extension of organic ...
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Ayar Labs: Optical Interconnect for AI Infrastructure
Ayar Labs optical I/O maximizes AI infrastructure compute efficiency and performance while reducing costs, latency, and power consumption.About · Careers · News · Ayar Labs + IntelMissing: 2023 | Show results with:2023
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Ayar Labs to Demo 'Commercial-Grade' 4Tbps Optical I/O Solution
The optical solution that Ayar Labs will be demoing consists of two key components: a SuperNova laser light source and a TeraPHY optical I/O ...<|control11|><|separator|>
[100]
3D-SOC design and backside interconnects - IMEC
Dec 11, 2021 · ... 30% power efficiency improvement compared to frontside routing. ... 'Cadence accelerates system innovation with breakthrough integrity 3D-IC ...
[101]
Through-Silicon-Via Interposers with Cu-Level Electrical ...
Dec 29, 2020 · A CNT-Cu composite TSV interposer was fabricated envisioning microelectronic packaging applications, which demonstrates both copper-level electrical ...
[102]
Technology review of CNTs TSV in 3D IC and 2.5D packaging
Jul 15, 2024 · This article revisits the proposal and progress of carbon nanotubes (CNTs) TSV technology that potentially offers an improvement over the conventional Cu TSV.
[103]
Thermal analysis of a novel fan-out packaging structure optimized ...
Jun 25, 2025 · Due to the superior thermal conductivity of graphene, a composite structure of 'graphene & copper' for the RDL was proposed. We constructed a ...
[104]
UCIe Consortium: Home
The UCIe 3.0 Specification is here – setting the next stage for the evolution of open chiplet standards! Read the Press Release to see what's making ...About UCIe · Resources · Universal Chiplet Interconnect... · SpecificationsMissing: 2022 interposer<|control11|><|separator|>
[105]
The Universal Chiplet Interconnect Express (UCIe) Standard
The UCIe standard is a universal, open standard for chiplet interconnects, enabling interoperability between different vendors' chiplets.
[106]
Semiconductor Packaging Industry Statistics 2024
AI/ML chip packaging revenue reached USD 6.9 billion in 2024, up 33.1% YoY. Over 94% of AI training chips use 2.5D interposer-based packaging with HBM stacks.
[107]
Interposer Market: Trends, Opportunities and Competitive Analysis
The global interposer market is expected to reach an estimated $1,184 million by 2030 with a CAGR of 18% from 2023 to 2030. The major drivers for this market ...Missing: 6G | Show results with:6G
[108]
Advanced Semiconductor Packaging 2025-2035 - IDTechEx
Organic interposers, which use a fan-out molding compound, offer a more cost-effective alternative to silicon. They have a lower dielectric constant, which ...
[109]
Amkor Technology Breaks Ground on New Semiconductor ...
Oct 6, 2025 · Amkor Technology Breaks Ground on New Semiconductor Advanced Packaging and Test Campus in Arizona; Expands Investment to $7 Billion. TEMPE, Ariz ...Missing: interposer | Show results with:interposer
[110]
Missing Interposer Abstractions And Standards
Nov 29, 2021 · “JEDEC has a spec for high-bandwidth memory (HBM) and is currently working on HBM3, which is planned to support 665 GB/s per package,” says John ...
[111]
TOPPAN Develops Coreless Organic Interposer for Next-Generation ...
Jun 11, 2024 · TOPPAN's new coreless organic interposer for next-generation semiconductors has both sides of the RDL reinforced with a low CTE material.Missing: recyclable | Show results with:recyclable
[112]
Resonac Launches JOINT3 Consortium to Drive Semiconductor ...
Sep 5, 2025 · Resonac has formed the JOINT3 consortium with 26 global companies to accelerate the development of panel-level organic interposers for next- ...
[113]
Commission and India sign agreement on semiconductors
Nov 23, 2023 · This agreement sets out how the EU and India will cooperate to build robust semiconductor supply chains and work together on innovation.Missing: diversification interposer 2027
[114]
Assessing India's Readiness to Assume a Greater Role in Global ...
Feb 14, 2024 · India has the potential to expand its presence in the semiconductor assembly, test, and packaging (ATP) segment to as many as five facilities.Missing: interposer | Show results with:interposer